15A，650V
N-CHANNELMOSFET
KIA
SEMICONDUCTORS
65R300
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
1.Description
ThisPowerMOSFETisproducedusingKIAsemi`sadvancedsuper-junctiontechnology.This
advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching
performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices
arewellsuitedforAC/DCpowerconversioninswitchingmodeoperationforhigherefficiency.
2. Features
n
R
DS(on)
=0.27
Ω
@
V
GS
=10V
n
Low
gate
charge
(
typical
43nC
)
n
High
ruggedness
n
Fast
switching
n
100%
avalanche
tested
n
Improved
dv/dt
capability
3. Pinconfiguration
1of6 Rev1.0JUN2015
Pin Function
1 Gate
2 Drain
3 Source
15A，650V
N-CHANNELMOSFET
KIA
SEMICONDUCTORS
65R300
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
4. Absolutemaximumratings
(T
C
=25 ºC,unlessotherwisenoted)
Parameter Symbol Rating Units
Drain-sourcevoltage V
DSS
650
V
Gate-sourcevoltage V
GSS
+30
V
Draincurrentcontinuous
T
C
=25ºC
I
D
15 A
T
C
=100ºC 9.4 A
Draincurrentpulsed(note1) I
DM
45
A
Avalancheenergy
Repetitive(note1) E
AR
0.32
mJ
Singlepulse(note2) E
AS
110
mJ
Avalancheenergy(note1) I
AR
2.1
A
Peakdioderecoverydv/dt(note3) dv/dt 5.0
V/ns
Totalpowerdissipation
T
C
=25 ºC
P
D
156
W
derateabove25 ºC 1.67 W/
º
C
Operatingandstoragetemperaturerange T
J,
T
STG
-55~+150 ºC
Maximum lead temperature for soldering
purposes,1/8〞fromcasefor5seconds
T
L
300 ºC
5. Thermalcharacteristics
Parameter Symbol Rating Unit
Thermalresistance,Junction-ambient R
thJA
62 ºC/W
Thermalresistance,case-to-sinktyp. R
thJS
0.5 ºC/W
Thermalresistance,Junction-case R
thJC
0.6 ºC/W
2of6 Rev1.0JUN2015