5A，650V
N-CHANNELMOSFET
KIA
SEMICONDUCTORS
65R950
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
1.Description
ThisPowerMOSFETisproducedusingKIAsemi`sadvancedsuper-junctiontechnology.This
advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching
performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices
arewellsuitedforAC/DCpowerconversioninswitchingmodeoperationforhigherefficiency.
2. Features
n
R
DS(on)
=0.85
Ω
@
V
GS
=10V
n
Low
gate
charge
(
typical
15nC
)
n
High
ruggedness
n
Fast
switching
n
100%
avalanche
tested
n
Improved
dv/dt
capability
3. Pinconfiguration
1of6 Rev1.0Jun2015
Pin Function
1 Gate
2 Drain
3 Source
4 Drain
5A，650V
N-CHANNELMOSFET
KIA
SEMICONDUCTORS
65R950
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
4. Absolutemaximumratings
(T
C
=25 ºC,unlessotherwisenoted)
Parameter Symbol Rating Units
Drain-sourcevoltage V
DSS
650
V
Gate-sourcevoltage V
GSS
+30
V
Draincurrentcontinuous
T
C
=25ºC
I
D
5* A
T
C
=100ºC 4* A
Draincurrentpulsed(note1) I
DM
16*
A
Avalancheenergy
Repetitive(note1) E
AR
34
mJ
Singlepulse(note2) E
AS
67.5
mJ
Avalancheenergy(note1) I
AR
1
A
Peakdioderecoverydv/dt(note3) dv/dt 4.5
V/ns
Totalpowerdissipation
T
C
=25 ºC
P
D
30
W
derateabove25 ºC 0.8 W/
º
C
Operatingandstoragetemperaturerange T
J,
T
STG
-55~+150 ºC
Maximum lead temperature for soldering
purposes,1/8〞fromcasefor5seconds
T
L
300 ºC
*Draincurrentlimitedbymaximumjunctiontemperature
5. Thermalcharacteristics
Parameter Symbol Rating Unit
Thermalresistance,Junction-ambient R
thJA
62 ºC/W
Thermalresistance,case-to-sinktyp. R
thJS
0.5 ºC/W
Thermalresistance,Junction-case R
thJC
4.17 ºC/W
2of6 Rev1.0Jun2015