47A，600V
N-CHANNELMOSFET
KIA
SEMICONDUCTORS
60R07
0
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
1.Description
ThisPowerMOSFETisproducedusingKIAsemi`sadvancedsuper-junctiontechnology.This
advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching
performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices
arewellsuitedforAC/DCpowerconversioninswitchingmodeoperationforhigherefficiency.
2. Features
n R
DS(ON)
=60mΩ@V
GS
=10V
n Lowgatecharge(typical170nC)
n Highruggedness
n Fastswitching
n 100%avalanchetested
n Improveddv/dtcapability
3. Pinconfiguration
1of7 Rev1.0JUL.2016
Pin Function
1 Gate
2 Drain
3 Source
47A，600V
N-CHANNELMOSFET
KIA
SEMICONDUCTORS
60R07
0
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
4. Absolutemaximumratings
(T
C
=25 ºC,unlessotherwisespecified)
Parameter Symbol Ratings Units
Drain-sourcevoltage V
DSS
600 V
Gate-sourcevoltage V
GSS
±30 V
Draincurrenetcontinuous
T
c
=25°C
I
D
47 A
T
c
=100°C 29 A
Draincurrentpulsed(note1) I
DM
140 A
Avalancheenergy
Repetitive(note1) E
AR
1.72 mJ
Singlepulse(note2) E
AS
1135 mJ
Avalanchecyrrent (note1) I
AR
9.3 A
Peakdioderecoverydv/dt(note3) dv/dt 50 V/ns
Totalpowerdissipation
T
c
=25°C
P
D
391 W
Derateabove25°C 3.13 W/°C
Operatingandstoragetemperaturerange T
J
，
T
STG
-55~+150 °C
Maximumleadtemperatureforsolderingpurposes,
1/8”fromcasefor5seconds
T
L
300 °C
*Draincurrentlimitedbymaximumjunctiontemperature
5. Thermalcharacteristics
Parameter Symbol Rating Unit
Thermalresistance,Junction-ambient R
thJA
62 ºC/W
Thermalresistance,case-to-sinktyp. R
thJS
0.5 ºC/W
Thermalresistance,Junction-case R
thJC
0.32 ºC/W
2of7 Rev1.0JUL.2016