Magnetoresistive RAM
Honeywell MRAM:
Reliable and Rad Hard Nonvolatile
Memory for Space Applications
Next Generation Memory
To provide space system electronics a robust and reliable nonvolatile memory for long term
data storage, Honeywell offers the new space-qualified, radiation hardened magnetoresistive
random access memory (MRAM). The Honeywell non-volatile MRAM offers longer data reten-
tion, excellent endurance and wider operating temperature range compared to other non-
volatile technologies.
With 1Mb, 16Mb and 64Mb (in development) density devices, system designers can now ben-
efit from a commercial-based memory technology that withstands the harsh environments of
space. The MRAM delivers long-term data integrity for critical applications like processor code
storage and fast access times for re-writeable data logs.
Why MRAM?
A combination of the MRAM and Honeywell Rad Hard Silicon on Insulator (SOI) CMOS
technologies makes it revolutionary.
Unlike most other memory technologies, MRAM data is stored as a magnetic state rather than
an electrical charge which results in longer data retention and reduction in power. A great new
memory is created by combining the ability to retain data (with or without power) and nearly
unlimited Read and Write cycles with the radiation hardened 150nm SOI CMOS technology.
Our MRAM series delivers high reliability and radiation hardness over a wide operating tem-
perature range of -40°C to +125°C.
Honeywell Committed to Your Innovations
PRODUCT CONFIGURATION VOLTAGE(V)
Read Access /
Write Cycle Time
TOTAL DOSE/SEU
1 Mb
HXNV0100
64K X 16 1.8V, 3.3V
Read: <80ns
Write: 140ns
300k or 1Mrad(Si)/
1E-10
upsets/bit-day
16 Mb
HXNV01600
2M x 8 or
1M x 16
3.3V
Read: <95ns
Write: 140ns
300k or 1Mrad(Si)/
1E-10
upsets/bit-day
64 Mb
HXNV06400
8M x 8 or
4M x 16
3.3V
Read: <100ns
Write: 150ns
300k or 1Mrad(Si)/
1E-10
upsets/bit-day
For over three decades, Honeywell radiation hardened components have been relied upon to
perform exceptionally in radiation intensive environments. Nearly every major mission in space
is successfully powered by Honeywell electronics. On August 6, 2012, “Curiosity”, the Mars
Space Landing vehicle arrived safely with Honeywell’s rad hard SRAM and mixed signal ASICs
aboard. Honeywell is committed to investing in your next generation technology, and continu-
ally enhances aerospace electronics to drive your systems faster, smarter, more reliably and
efficiently than previous versions.
Long Term or Short Term
Applications
• Store embedded processor and
FPGA code
• Calibration coefficients
• Critical data recorders (black boxes)
• Re-writeable data log
• Encryption parameters
• Replaces “battery backed up” SRAMs
Honeywell MRAM Ready for
Take Off
Contact a Honeywell sales
representative in your area to
benefit from the MRAM advantage.
For more details, visit
www.honeywellmicroelectronics.com
to download datasheets and find a
Honeywell representative.
Find out more
Learn more about Honeywell
Microelectronics solutions
at www.honeywellmicroelectronics.com
Honeywell Aerospace
Honeywell
12001 Highway 55
Plymouth, MN 55441
Tel: 800-323-8295
www.honeywell.com
July 2015
© 2015
Honeywell International Inc.
Honeywell reserves the right to make
changes to improve reliability, func-
tion or design. Honeywell does not
assume any liability arising out of the
application or use of any product or
circuit described herein; neither does
it convey any license under its patent
rights nor the rights of others.