QPA1013D
6–18 GHz 10 W GaN Power Amplifier
Data Sheet Rev D, July 2022 | Subject to change without notice
1 of 15
www.qorvo.com
®
General Description
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amplifier fabricated on Qm GaN on
SiC process (QGAN15). The QPA1013D operates from
618 GHz and provides more than 10 W saturated output
power with power-added efficiency >20% and large-signal
gain >20 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
egrated DC
blocking capacitors on both RF I/O ports simplifying
system integration. The broadband performance makes it
ideally suited in support of test instrumentation and
electronic warfare, as well as, supporting multiple radar
and communication bands.
The QPA1013D is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Functional Block Diagram
Product Features
• Frequency Range: 618 GHz
• P
OUT
: > 40 dBm (P
IN
= 20 dBm)
• PAE: > 20% (P
IN
= 20 dBm)
• Large Signal Gain: > 20 dB (PIN = 20 dBm)
• Small Signal Gain: > 25 dB
• Return Loss: > 6.5 dB
• Bias: V
D
= 20 V, I
DQ
= 1250 mA
• Chip Dimensions: 5.05 x 3.55 x 0.10 mm
Applications
• Test Instrumentation
• Electronic Warfare (EW)
• Radar
• Communications
Ordering Information
Part
Description
QPA1013D
618 GHz 10 W GaN Power Amplifier
QPA1013DEVBP01
Evaluation Board
32 4 5 6
1112 10 9 8
71
QPA1013D
6–18 GHz 10 W GaN Power Amplifier
Data Sheet Rev D, July 2022 | Subject to change without notice
2 of 15
www.qorvo.com
®
Absolute Maximum Ratings
Parameter
Value/Range
Drain Voltage (V
D
)
29.5 V
Gate Voltage Range (V
G
)
8 to 0 V
Drain Current (I
D1
)
480 mA
Drain Current (I
D2
)
720 mA
Drain Current (I
D3
)
2880 mA
Gate Currents (I
G1
/I
G2
/I
G3)
See plot on page 3
Power Dissipation (P
DISS
), 85 °C, CW
75 W
Input Power (P
IN
), VD = 20 V,
IDQ = 1250 mA, 85 °C, CW
28 dBm
Input Power (P
IN
), V
SWR
3:1, VD = 20 V,
IDQ = 1250 mA, 85 °C, CW
28 dBm
Mounting Temperature (30 seconds)
320 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Recommended Operating Conditions
Parameter
Value/Range
Drain Voltage (V
D
)
20 V
Drain Current (I
DQ
)
1250 mA (Total)
Gate Voltage Range (V
G
)
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C , V
D
= 20 V, I
DQ
= 1250 mA
Parameter
Min
Typical
Max
Units
Operational Frequency Range
6
18
GHz
Small Signal Gain
>25
dB
Input Return Loss
>6.5
dB
Output Return Loss
>7
dB
Power Gain (P
IN
= 20 dBm)
>20
dB
Output Power (P
IN
= 20 dBm)
>40
dBm
Power Added Efficiency (P
IN
= 20 dBm)
22
%
Gate Leakage (V
D
= 10 V, V
G
19.6
0.0001
mA
Small Signal Gain Temperature Coefficient
0.061
dB/°C
Output Power Temperature Coefficient
(Calculated from 25 °C to 85 °C) (Pin = 20 dBm)
0.017
dBm/°C