Applications:
Value Unit
650 V
1.4 Ω
3 A
Notes:
• High Frequency Swithching
• Quick Charging and Adapter
AKS65N1M4KM
DATASHEET
650V 1.4ohm Super-Junction Power MOSFET
AKS65N1M4KM
Description:
This SJ device provides good FOM performance, better EMI for customer application.
Parameter
V
DS
R
DSON
,
max
@V
GS
= 10V
I
D
Features:
• Low FOM R
DS(ON)
×Q
G
• Better EMI
• 100% UIS tested
• RoHS compliant
(Note 1)
• Halogen-free
(Note 1)
Key Performance Parameters:
Ordering Information:
1. Contact ALKAIDSEMI sales for detail information
Packing
2500PCS
Form
13 Inches Reel
Package Type
TO-252
Ordering Code
AKS65N1M4KM
©ALKAIDSEMI TECHNOLOGIES
1/9 Rev.1.0 2021-12-24
Symbol Units
V
DS
V
A
A
I
DM
A
V
GS
V
E
AS
mJ
P
D
W
T
J,
T
STG
°C
Thermal Characteristics
Symbol Units
R
θJC
°C/W
R
θJA
°C/W
Notes:
1. The max drain current rating is package limited
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 100 mH, V
DD
= 150V, I
AS
= 1.2A, R
G
= 25 Ω, Starting T
J
= 25 °C
52
-55 to +150
AKS65N1M4KM
DATASHEET
Maximum Ratings (T
A
= 25°C unless otherwise noted)
I
D
65
4. Mount on minimum PCB layout
Parameter
Drain-Source Voltage
Drain Current - Continuous (T
C
= 25°C)
(Note 1)
Drain Current - Continuous (T
C
= 100°C)
Thermal Resistance, Junction-to-Ambient, Steady-State
(Note 4)
Value
650
3
2.4
10
± 30
72
Drain Current - Pulsed
(Note 2)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 3)
Power Dissipation (T
C
= 25°C)
Operating and Storage Temperature Range
Parameter
Value
Thermal Resistance, Junction-to-Case, Steady-State
2.4
©ALKAIDSEMI TECHNOLOGIES
2/9 Rev.1.0 2021-12-24