Features
●I
o
1A
●VRRM 50V-1000V
●High surge current capability
Applications
● Rectifier
●
Marking
Polarity: Color band denotes cathode
●
Glass passivated chip
●
US1AL-US1DL : USL
1
Notes:
SOD-1 23FL
US1AL THRU US1ML
US1GL : USM
US1JL-US1ML : USH
●
●
US1
Item
Symbol
Unit Conditions
Repetitive Peak Reverse Voltage
V
RRM
V
50 100 200 300 400 600 800 1000
Average Forward Current
I
F(AV)
A
1.0
Surge(Non-repetitive)Forward
Current
I
FSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
30
Junction Temperature
T
J
℃
Storage Temperature
T
STG
℃
-55 ~ +150
Electrical Characteristics (T
a
=25℃ Unless otherwise specified)
US1
Item
Symbol
Unit
Test Condition
1A 1B 1D 1F 1G 1J 1K 1M
Peak Forward Voltage
V
FM
V
I
FM
=1.0A
1.0 1.3 1.7
I
RRM1
T
a
=25℃
5
Peak Reverse Current
I
RRM2
μA V
RM
=V
RRM
T
a
=125℃
50
Reverse Recovery time
t
rr
ns
I
F
=0.5A I
R
=1A
I
RR
=0.25A
50 75
R
θ
J-A
Thermal
Resistance(Typical)
R
θ
J-L
/W℃
-55 ~ +150
Between junction and ambient
70
1)
Between junction and terminal
25
1)
AL BL DL GL JL ML
KL
FL
AL BL DL GL JL ML
KL
FL
Maximum RMS Voltage
V
RMS
35
70 140 280 420
560 700
210
（1） Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm
copper pad areas
.
90
2
V
R
D
R
L
I
F
0
IF
I
R
I
RR
t
t
rr
I
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
IF(A)
FIG.3: TYPICAL FORWARD CHARACTERISTICS
0.01
VF(V)
0.4
TJ=25
℃
Pulse width=300us
1% Duty Cycle
0.1
1.0
10
100
0.60.81.01.21.41.6
US1AL-DL
US1GL
US1JL-ML
0.2
FIG.4
：
TYPICAL REVERSE CHARACTERISTICS
Voltage(%)
IR(uA)
0
20
40 60 80 100
0.1
Tj=25
℃
Tj=100
℃
1000
1.0
10
100
0
50 150
FIG.1: FORWARD CURRENT DERATING CURVE
IO(A)
Ta(
℃
)
100
0.2
0.4
0.6
0.8
1.0
0
Single Phase
Half Wave 60Hz
Resistive Load
IFSM(A)
Number of Cycles
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
1 2 10 20 100
0
5
10
15
20
25
30
35