SHENZHEN MENGKE ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S9012
TRANSI STOR (PNP)
MARKING: Equivalent Circuit:
FEATURES:
※ Complimentary to S9013
※ Collector Current: Ic=0.5A
※ Ecxellent Hfe Linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA
Collector Power Dissipation PC 300 mW
Thermal Resistance From Junction To Ambient RΘJA 416 ℃/W
Junction Temperature Tj 150
℃
Storage Temperature Tstg -55～+150
℃
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
www.mengkekj.com
1_ _
2019/7/6
SHENZHEN MENGKE ELECTRONICS TECHNOLOGY CO.,LTD
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0
-40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0
-25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0
-5 V
Collector cut-off current ICBO VCB=-40 V , IE=0
-0.1 μA
Collector cut-off current ICEO VCB=-25V , IE=0
-0.1 μA
Emitter cut-off current IEBO VEB= -5V , IC=0
-0.1 μA
DC current gain
hFE VCE=-1V, IC= -50mA
120 400
hFE VCE=-1V, IC= -500mA
60
Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA
-0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50mA
-1.2 V
Transition frequency fT
VCE=-6V, IC= -20mA
f=30MHz
150 MHz
Collector output capacitance Cob
VCB=-10V, IE=0,
f=1MHz
5 pF
CLASSIFICATION OF hFE
Rank L H J
Range 120-200 200-350 300-400
www.mengkekj.com
2_ _
2019/7/6