SHENZHEN MENGKE ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S9013
TRANSI STOR (NPN)
MARKING: Equivalent Circuit:
FEATURES:
※ Complimentary to S9012
※ Collector Current: Ic=0.5A
※ Ecxellent Hfe Linearity
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500 mA
Collector Power Dissipation PC 300 mW
Thermal Resistance From Junction To Ambient RΘJA 417 ℃/W
Junction Temperature Tj 150
℃
Storage Temperature Tstg -55～+150
℃
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
www.mengkekj.com
1 _
2019/7/10
SHENZHEN MENGKE ELECTRONICS TECHNOLOGY CO.,LTD
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0
40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0
25 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0
5 V
Collector cut-off current ICBO VCB=40 V , IE=0
0.1 μA
Collector cut-off current ICEO VCB=25V , IE=0
0.1 μA
Emitter cut-off current IEBO VEB= 5V , IC=0
0.1 μA
DC current gain
hFE VCE=1V, IC= 50mA
120 400
hFE VCE=1V, IC= 500mA
40
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA
0.6 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA
1.2 V
Base-emitter voltage VBE VCB=1V,IC=10mA,
0.7 V
Transition frequency fT
VCE=6V, IC=20mA
f=30MHz
150 MHz
Collector output capacitance Cob
VCB=6V, IE=0,
f=1MHz
8 pF
CLASSIFICATION OF hFE
Rank L H J
Range 120-200 200-350 300-400
www.mengkekj.com
2 _
2019/7/10