SHENZHEN MENGKE ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S9014
TRANSI STOR (NPN)
MARKING: Equivalent Circuit:
FEATURES:
※ Complimentary to S9015
※ Collector Current: Ic=100mA
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base Voltage
VCBO 50 V
Collector-Emitter Voltage
VCEO 45 V
Emitter-Base Voltage
VEBO 5 V
Collector Current
IC 100 mA
Collector Power Dissipation
PC 200 mW
Thermal Resistance From Junction To Ambient
RΘJA 625 ℃/W
Junction Temperature
Tj 150
℃
Storage Temperature
Tstg -55～+150
℃
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
www.mengkekj.com
1_ _
2019/7/10
SHENZHEN MENGKE ELECTRONICS TECHNOLOGY CO.,LTD
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0
50 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0
45 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0
5 V
Collector cut-off current ICBO VCB= 50 V , IE=0
0.1 μA
Collector cut-off current ICEO VCB= 35V , IE=0
1 μA
Emitter cut-off current IEBO VEB= 6V , IC=0
0.1 μA
DC current gain
hFE VCE=5V, IC= 1mA
200 1000
hFE VCE=5V, IC= 10mA
100
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA
0.3 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA
1 V
Transition frequency fT
VCE=6V, IC= 20mA
f=30MHz
150 MHz
CLASSIFICATION OF hFE
Rank L H
Range 200-450 450-1000
www.mengkekj.com
2_ _
2019/7/10