93
Process C3025
CMOS 3µm
10 Volt Analog
N-Channel T ransistor Symbol Minimum Typical Maximum Unit Comments
Threshold Voltage VT
N
0.65 0.85 1.05 V 100x4µm
Body Factor
γ
N
0.87 V
1/2
100x4µ
m
Conduction Factor
β
N
40 48 56
µ
A/V
2
100x100
µ
m
Effective Channel Length Leff
N
3.05 3.40 3.75 µm 100x4
µm
Width Encroachment ∆
W
N
0.550 µm Per side
Punch Through V oltage
BVDSS
N
16.5 V
Poly Field Threshold Voltage
VTF
P(N)
12 V
P-Channel T ransistor Symbol Minimum Typical Maximum Unit Comments
Threshold Voltage VT
P
–0.7 –0.9 –1.1 V 100x4µm
Body Factor
γ
P
0.75 V
1/2
100x4µm
Conduction Factor
β
P
13 16 19 µA/V
2
100x100µm
Effective Channel Length Leff
P
3.00 3.35 3.70
µm 100x4
µm
Width Encroachment ∆W
P
0.8
µ
m Per side
Punch Through V oltage
BVDSS
P
–16.5 V
Poly Field Threshold Voltage
VTF
P(P)
–12 V
Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments
Well (field) Sheet Resistance
ρ
P-well(f)
3.25 5.25 7.25 KΩ/o P-well
N+ Sheet Resistance
ρ
N+
13 20 27 Ω
/o
N+ Junction Depth x
jN+
0.8
µm
P+ Sheet Resistance
ρ
P+
50 80 100 Ω
/o
P+ Junction Depth x
jP+
0.7 µm
Gate Oxide Thickness T
GOX
45 48 51 nm
Interpoly Oxide Thickness T
P1P2
56 66 76 nm
Gate Poly Sheet Resistance
ρ
POLY1
15 22 30 Ω
/
o
Bottom Poly Sheet Res.
ρ
POLY2
15 22 30 Ω/o
Metal-1 Sheet Resistance
ρ
M1
50 mΩ/o
Passivation Thickness T
PASS
200+900 nm oxide+nit.
Capacitance Symbol Minimum Typical Maximum Unit Comments
Gate Oxide C
OX
0.68 0.72 0.78 fF/µm
2
Metal-1 to Poly-1 C
M1P
0.047 0.0523 0.0575 fF/µm
2
Metal-1 to Silicon C
M1S
0.027 0.30 0.034 fF/µm
2
Poly-1 to Poly-2 C
P1P2
0.453 0.523 0.617 fF/µm
2
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
®
© Daily Silver IMP
94
C3025
Process C3025
Starting Material P <100> N+/P+ Width/Space 3.0 / 3.0µm
Starting Mat. Resistivity 15 - 25 Ω-cm N+ To P+ Space 12µm
Typ. Operating Voltage 10V Contact To Poly Space 2.5µm
Well Type P-well Contact Overlap Of Active 1.5µm
Metal Layers 1 Contact Overlap Of Poly 1.0µm
Poly Layers 2 Metal-1 Overlap Of Contact 1.0µm
Contact Size 2.0x2.0µm Minimum Pad Opening 100x100µm
Metal-1 Width/Space 3.5 / 2.5µm Minimum Pad-to-Pad Spacing 5.0µm
Gate Poly Width/Space 3.0 / 3
µ
m Minimum Pad Pitch 80.0
µ
m
Special Feature of C3025 Process: 10 Volt P-well single metal analog process.
Physical Characteristics