89
Process C3015
CMOS 3µm
Digital
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
®
N-Channel T ransistor Symbol Minimum Typical Maximum Unit Comments
Threshold Voltage VT
N
0.6 0.8 1.0 V 100x3
µm
Body Factor
γ
N
0.6 V
1/2
100x3µm
Conduction Factor β
N
42 47 52 µA/V
2
100x100µm
Effective Channel Length Leff
N
2.85 3.2 3.55 µm 100x3µm
Width Encroachment ∆W
N
0.7 µm Per side
Punch Through V oltage
BVDSS
N
12 V
Poly Field Threshold Voltage
VTF
P(N)
12 V
P-Channel T ransistor Symbol Minimum Typical Maximum Unit Comments
Threshold Voltage VT
P
–0.6 –0.8 –1.0 V 100x3
µ
m
Body Factor
γ
P
0.55 V
1/2
100x3µ
m
Conduction Factor β
P
13 15 19
µA/V
2
100x100
µm
Effective Channel Length Leff
P
2.85 3.2 3.55 µm 100x3
µm
Width Encroachment ∆W
P
0.9 µm Per side
Punch Through V oltage
BVDSS
P
–12 V
Poly Field Threshold Voltage
VTF
P(P)
–12 V
Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments
Well (field) Sheet Resistance
ρ
P-well(f)
3.2 4.8 6.5 KΩ/o P-well
N+ Sheet Resistance
ρ
N+
16 21 27 Ω/o
N+ Junction Depth x
jN+
0.8 µ
m
P+ Sheet Resistance
ρ
P+
50 80 100 Ω/o
P+ Junction Depth x
jP+
0.7
µ
m
Gate Oxide Thickness T
GOX
37.5 40.0 42.5 nm
Gate Poly Sheet Resistance
ρ
POLY1
15 22 30 Ω/o
Metal-1 Sheet Resistance
ρ
M1
30 60 mΩ/o
Passivation Thickness T
PASS
200+900 nm oxide+nit.
Capacitance Symbol Minimum Typical Maximum Unit Comments
Gate Oxide C
OX
0.66 0.72 0.78 fF/µm
2
Metal-1 to Poly-1 C
M1P
0.0523 fF/µm
2
Metal-1 to Silicon C
M1S
0.026 0.030 0.034 fF/µm
2
© Daily Silver IMP
90
C3015
Process C3015
Starting Material N <100> N+/P+ Width/Space 3.0 / 3.0
µ
m
Starting Mat. Resistivity 15 - 25
Ω
-cm N+ To P+ Space 12
µ
m
Typ. Operating Voltage 5V Contact To Poly Space 2.5µm
Well Type P-well Contact Overlap Of Diffusion 1.5
µ
m
Metal Layers 1 Contact Overlap Of Poly 1.0
µ
m
Poly Layers 1 Metal-1 Overlap Of Contact 1.0
µ
m
Contact Size 2.0x2.0
µ
m Minimum Pad Opening 100x100µ
m
Metal-1 Width/Space 3.5 / 2.5µm Minimum Pad-to-Pad Spacing 5.0µm
Gate Poly Width/Space 3.0 / 2.5
µ
m Minimum Pad Pitch 80.0
µ
m
Special Feature of C3015 Process: 3
µm P-well digital process.
Physical Characteristics
05
0
5
Drain Current (mA) I
DS
Drain Voltage (v), V
DS
4
3
2
1
1234
ID vs VD, W/L = 20/4.0
n-ch Transistor IV Characteristics of a 20/4.0 device
V
GS
= 2.0V
V
GS
= 10V
V
GS
= 8.0V
V
GS
= 7.0V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 9.0V
678910
Drain Current (mA) I
DS
Drain Voltage (v) V
DS
05
0
–3
–2.5
–2
–1
–.5
1234
ID vs VD, W/L = 20/4.0
p-ch Transistor Characteristics of a 20/4.0 device
–1.5
678910
V
GS
= –4.0V
V
GS
= –3.0V
V
GS
= –2.0V
V
GS
= –6.0V
V
GS
= –7.0V
V
GS
= –8.0V
V
GS
= –9.0V
V
GS
= –10V
V
GS
= –5.0V
Cross-sectional view of the C3015 process
Second metal
SIO
2
LTO
p
+
p
+
p
+
n
+
p
Field Oxide
p-well contact
Drain
Poly gate
p-well
source
Drain
Source
N
–
substrate contact
Sidewall spacer
Bottom poly
Contact
Poly gate
N
+
substrate
n
+
n
+
A1
p p
SIO
2
n-epi