85
Process C3013
CMOS 3µm
10 Volt Single Metal Analog
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
®
N-Channel T ransistor Symbol Minimum Typical Maximum Unit Comments
Threshold Voltage VT
N
0.6 0.8 1.0 V 100x4µm
Body Factor
γ
N
0.6 V
1/2
100x4µ
m
Conduction Factor
β
N
42 47 52
µ
A/V
2
100x100
µ
m
Effective Channel Length Leff
N
2.85 3.2 3.55 µm 100x4
µm
Width Encroachment ∆
W
N
0.7 µm Per side
Punch Through V oltage
BVDSS
N
12 V
Poly Field Threshold Voltage
VTF
P(N)
12 V
P-Channel T ransistor Symbol Minimum Typical Maximum Unit Comments
Threshold Voltage VT
P
–0.6 –0.8 –1.0 V 100x4µm
Body Factor
γ
P
0.55 V
1/2
100x4µm
Conduction Factor
β
P
13 15 19 µA/V
2
100x100µm
Effective Channel Length Leff
P
2.85 3.2 3.55
µm 100x4
µm
Width Encroachment ∆W
P
0.9
µ
m Per side
Punch Through V oltage
BVDSS
P
–12 V
Poly Field Threshold Voltage
VTF
P(P)
–12 V
Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments
Well (field) Sheet Resistance
ρ
P-well(f)
3.2 4.8 6.5 KΩ/o P-well
N+ Sheet Resistance
ρ
N+
16 21 27 Ω
/o
N+ Junction Depth x
jN+
0.8
µm
P+ Sheet Resistance
ρ
P+
50 80 100 Ω
/o
P+ Junction Depth x
jP+
0.7 µm
Gate Oxide Thickness T
GOX
44 48 52 nm
Interpoly Oxide Thickness T
P1P2
60 nm
Gate Poly Sheet Resistance
ρ
POLY1
15 22 30 Ω
/
o
Bottom Poly Sheet Res.
ρ
POLY2
15 22 30 Ω/o
Metal-1 Sheet Resistance
ρ
M1
30 60 mΩ/o
Passivation Thickness T
PASS
200+900 nm oxide+nit.
Capacitance Symbol Minimum Typical Maximum Unit Comments
Gate Oxide C
OX
0.66 0.72 0.78 fF/µm
2
Metal-1 to Poly-1 C
M1P
0.0523 fF/µm
2
Metal-1 to Silicon C
M1S
0.026 0.030 0.034 fF/µm
2
Poly-1 to Poly-2 C
P1P2
0.51 0.57 0.63 fF/µm
2
© Daily Silver IMP
86
C3013
Process C3013
Physical Characteristics
Starting Material N <100> N+/P+ Width/Space 3.0 / 3.0µ
m
Starting Mat. Resistivity 15 - 25
Ω
-cm N+ To P+ Space 12
µ
m
Typ. Operating Voltage 5V Contact To Poly Space 2.5
µm
Well Type P-well Contact Overlap Of Diffusion 1.5
µ
m
Metal Layers 1 Contact Overlap Of Poly 1.0µm
Poly Layers 2 Metal-1 Overlap Of Contact 1.0µm
Contact Size 2.0x2.0µ
m Minimum Pad Opening 100x100µm
Metal-1 Width/Space 3.5 / 2.5
µ
m Minimum Pad-to-Pad Spacing 55
µ
m
Gate Poly Width/Space 4.0 / 2.5µm Minimum Pad Pitch 80.0
µm
Special Feature of C3013 Process: P-well analog process with single metal CMOS 3.0 µm
technology for 10 Volt applications.