TRANSISTOR(NPN)
FEATURES
z
Complimentary to S8550
z
Collector Current: I
C
=0.5A
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 0.5 A
P
C
Collector Dissipation 0.3 W
T
j
Junction Temperature 150
℃
T
stg
S torage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100
μ
A, I
E
=0
40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA, I
B
=0 25 V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
=100
μ
A, I
C
=0
5 V
Collector cut-off current
I
CBO
V
CB
=40 V , I
E
=0 0.1
μA
Collector cut-off current
I
CEO
V
CB
=20V , I
E
=0 0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 5V , I
C
=0 0.1
μA
H
FE(1)
V
CE
=1V, I
C
= 50mA 120 350
DC current gain
H
FE(2)
V
CE
=1V, I
C
= 500mA 50
Collector-emitter saturation voltage
V
CE
(sat) I
C
=500 mA, I
B
= 50mA 0.6 V
Base-emitter saturation voltage
V
BE
(sat) I
C
=500 mA, I
B
= 50mA 1.2 V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA
f=
30MHz
150 MHz
CLASSIFICATION OF h
FE(1)
Rank
L H
Range
120-200 200-350
SO
T
-23
1. BASE
2. EMITTER
3. COLLECTOR
S8050
1
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