MAXIMUM RATINGS
Characteristic
Symbol
Max
Unit
Drain-Source Voltage
BV
DSS
-20
V
Gate- Source Voltage
V
GS
+8
V
Drain Current (continuous)
I
D
-2.4
A
Drain Current (pulsed)
I
DM
-10
A
Total Device Dissipation
T
A
=
25
℃
P
D
900
mW
Junction
T
J
150
℃
Storage Temperature
T
stg
-55to+150
℃
SL2301S
P-Channel
Power MOSFET
General Features
● V
DS
= -20V,I
D
= -2.4A
R
DS(ON)
< 200mΩ @ V
GS
=-2.5V
R
DS(ON)
< 140mΩ @ V
GS
=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM applications
● Load switch
● Power management
D
G
S
Schematic diagram
Marking and Pin Assignment
SOT-23 top view
1
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ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted
)
Characteristic Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
(I
D
= -250uA,V
GS
=0V)
BV
DSS
-20
— —
V
Gate Threshold Voltage
(I
D
= -250uA,V
GS
= V
DS
)
V
GS(th)
-0.4
— -1.5
V
Diode Forward Voltage Drop
(I
S
= -0.75A,V
GS
=0V)
V
SD
—
— -1.5
V
Zero Gate Voltage Drain Current
(V
GS
=0V, V
DS
= -16V, T
A
=55℃)
I
DSS
— — -1
-10
uA
Gate Body Leakage
(V
GS
=+8V, V
DS
=0V)
I
GSS
— — +100 nA
Static Drain-Source On-State Resistance
(I
D
= -2.4A,V
GS
= -4.5V)
R
DS(ON)
— — 140 mΩ
Static Drain-Source On-State Resistance
(I
D
= -2A,V
GS
= -2.5V)
R
DS(ON)
— — 200 mΩ
Input Capacitance
(V
GS
=0V, V
DS
= -10V,f=1MHz)
C
ISS
— 600 — pF
Output Capacitance
(V
GS
=0V, V
DS
= -10V,f=1MHz)
C
OSS
— 120 — pF
Turn-ON Time
(V
DS
= -10V, I
D
= -2.4A, R
GEN
=6Ω)
t
(on)
— 8 — ns
Turn-OFF Time
(V
DS
= -10V, I
D
= -2.4A, R
GEN
=6Ω)
t
(off)
— 60 — ns
Pulse Width<300μs; Duty Cycle<2.0%
2
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SL2301S