MAXIMUM RATINGS
Characteristic
Symbol
Max
Unit
Drain-Source Voltage
BV
DSS
20
V
Gate- Source Voltage
V
GS
+8
V
Drain Current (continuous)
I
D
2.6
A
Drain Current (pulsed)
I
DM
10
A
Total Device Dissipation
T
A
=
25
℃
P
D
900
mW
Junction
T
J
150
℃
Storage Temperature
T
stg
-55to+150
℃
General Features
● V
DS
= 20V,I
D
=2.6A
R
DS(ON)
< 120mΩ @ V
GS
=2.5V
R
DS(ON)
< 85mΩ @ V
GS
=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Battery protection
● Load switch
● Power management
D
G
S
Schematic diagram
1
3
2
G
D
S
Marking and pin assignment
SOT-23 top view
SL2302S
N-Channel
Power MOSFET
1
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ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted
)
Characteristic Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
(I
D
= 250uA,V
GS
=0V)
BV
DSS
20
— —
V
Gate Threshold Voltage
(I
D
= 250uA,V
GS
= V
DS
)
V
GS(th)
0.4
— 1.5
V
Drain-Source On Voltage
(I
D
= 50mA,V
GS
= 5V)
(I
D
= 500mA,V
GS
= 10V)
V
DS(ON)
—
— 0.375
3.75
V
Diode Forward Voltage Drop
(I
S
= 0.75A,V
GS
=0V)
V
SD
—
— 1.2
V
Zero Gate Voltage Drain Current
(V
GS
=0V, V
DS
= 16V)
(V
GS
=0V, V
DS
= 16V, T
A
=55℃)
I
DSS
— — 1
10
uA
Gate Body Leakage
(V
GS
=+8V, V
DS
=0V)
I
GSS
— — +100 nA
Static Drain-Source On-State Resistance
(I
D
=2.6A,V
GS
=4.5V)
(I
D
=2A,V
GS
=2.5V)
R
DS(ON)
— — 85
120
mΩ
Input Capacitance
(V
GS
=0V, V
DS
= 6V,f=1MHz)
C
ISS
— — 880 pF
Common Source Output Capacitance
(V
GS
=0V, V
DS
= 6V,f=1MHz)
C
OSS
— — 270 pF
Turn-ON Time
(V
DS
= 6V, I
D
= 1A, R
GEN
=6Ω)
t
(on)
— — 20 ns
Turn-OFF Time
(V
DS
= 6V, I
D
= 1A, R
GEN
=6Ω)
t
(off)
— — 65 ns
Pulse Width<300μs; Duty Cycle<2.0%
2
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SL2302S