20V
N
-C
ha
nne
l MOSF
E
T
Pro
du
ct S
ummary
Feature
��� Surface Mount P
ackage
N-Channel Sw
itch with Low R
DS
(on)
Operated at
Low Logic Level Ga
te Drive
ESD Prote
cted
Application
Load/P
o
we
r Switching
Interfacin
g Switching
Battery Man
agement for Ult
ra Small Portable
Elec
troni
c
s
Logic Level Shift
Package
Circuit diagram
V
(BR)
DSS
R
DS
(on)M
AX
I
D
20V
110mΩ@4.5V
150mΩ@2.5V 1.2A
SOT-723
SL2302M
1
www.slkormicro.com
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current I
D
1.2 A
Pulsed Drain Current I
DM
1.8 A
Power Dissipation P
D
0.15 W
Thermal Resistance from Junction to Ambient R
θJA
833 ℃/W
Junction Temperature T
J
150 ℃
Storage Temperature T
STG
-55~ +150 ℃
Elec
trical charac
terist
ics (T
A
=
25
o
C, unless o
therwi
se note
d)
Pa
ram
et
er Sym
bol
Te
st Con
dit
io
n Min.
Typ
. M
ax. Un
it
Sta
tic Charact
erist
ics
Dr
ain
-sour
ce br
e
akdo
wn vol
tag
e V
(B
R)DSS
V
GS
= 0V,
I
D
=2
50
µA 2
0 V
Zer
o ga
te
vol
tage d
rain
c
urre
nt I
DS
S
V
D
S
=
16V
,V
GS
=
0V 1
µA
Gate-body
leakage cur
rent I
GSS
V
GS
=±10V, V
D
S
= 0V ±10
uA
G
ate thres
hold v
ol
tage V
GS(th)
V
DS
=
V
GS
, I
D
=
25
0µA 0.
3 0.65 1 V
Drain-source on-resistance R
DS(on)
V
GS
= 4.5V, I
D
= 1.2A 90 110
V
GS
=2.5V, I
D
= 0.8A 115 150 mΩ
V
GS
=1.8V, I
D
= 0.3A 165 215
Dy
nam
ic c
haract
eri
sti
cs
Input Capacitance C
iss
V
DS
=16
V,V
GS
=0V,
f=1MH
z
79 120
pFOutput Capacitance C
oss
13 20
Rev
erse Transfer Cap
acita
nce C
rss
9 1
5
Switchi
ng C
haracte
ris
tics
Turn-on d
el
ay time t
d(on
)
V
GS
=4.5V,V
DS
=10V,
I
D
=500mA,
R
GEN
=
1
0Ω
6.7
n
s
Tur
n-o
n r
is
e ti
me t
r
4
.8
Turn-off delay time t
d(off)
17.3
Tu
rn
-of
f fa
ll
ti
me t
f
7.
4
Source-Drain Diode characteristics
Body Diode Voltage V
SD
I
S
=0.5A, V
GS
= 0V 0.7 1.3 V
SL2302M
2
www.slkormicro.com