信展通电子X·T ELECTRONICS
Apr.2019 Rev.B
MMDT3904
1
DUAL TRANSISTOR(NPN+NPN)
SOT-363
SOT-363 贴片塑封三极管
SOT-363 Plastic-EncapsulateTransistors
特征 Features
与 MMDT3906 配对; Complementary to MMDT3906
最大功率耗散 200mW; Power Dissipation of 200mW
高稳定性和可靠性。High Stability and High Reliability
1. Emitter1
2. Base1
3. Collector2
4. Emitter2
5. Base2
6. Collector1
机械数据 Mechanical Data
封装: SOT-363 封装SOT-363 Small Outline Plastic Package
环氧树脂UL 易燃等级Epoxy UL: 94V-0
安装位置: 任意 Mounting Position: Any
极限值和温度特性(TA = 25℃ 除非另有规定)
Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)
参数 Parameters
符号Symbol
数值 Value
单位Unit
集电极-基极电压Collector-Base Voltage
V
CBO
60
V
集电极-发射极电压Collector-Emitter Voltage
V
CEO
40
V
发射极-基极电压Emitter -Base Voltage
V
EBO
6
V
集电极连续电流Collector Current-Continuous
I
C
200
mA
集电极功耗Collector Power Dissipation
P
C
200
mW
结温Junction Temperature
T
j
150
℃
储存温度Storage Temperature
Tstg
-55-+150
℃
结环热阻Thermal resistance From junction to ambient
R
θJA
625
℃/W
电特性 (TA = 25℃ 除非另有规定)
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
参数Parameter
符号
Symbol
测试条件Test conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
集电极-基极击穿电压
Collector-base breakdown voltage
V
(BR)CBO
I
C
=10μA,I
E
=0
60
V
集电极-发射极击穿电压
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA,I
B
=0
40
V
发射极-基极击穿电压
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10μA,I
C
=0
5
V
集电极截止电流
Collector cut-off current
I
CBO
V
CB
=30V,I
E
=0
50
nA
发射极截止电流Emitter cut-off current
I
EBO
V
EB
=5V,I
C
=0
50
nA
直流电流增益DC current gain
h
FE(1)
V
CE
=1V,I
C
=0.1mA
40
h
FE(2)
V
CE
=1V,I
C
=1mA
70
h
FE(3)
V
CE
=1V,I
C
=10mA
100
300
h
FE(4)
V
CE
=1V,I
C
=50mA
60
h
FE(5)
V
CE
=1V,I
C
=100mA
30
集电极-发射极饱和电���
Collector-emitter saturation voltage
V
CE(sat)1
I
C
=10mA,I
B
=1mA
0.2
V
V
CE(sat)2
I
C
=50mA,I
B
=5mA
0.3
V
基极-发射极饱和电压
Base-emitter saturation voltage
V
BE(sat)1
I
C
=10mA,I
B
=1mA
0.65
0.85
V
V
BE(sat)2
I
C
=50mA,I
B
=5mA
0.95
V
特征频率Transition frequency
f
T
V
CE
=20V,I
C
=10mA,f=100MHz
300
MHz
延迟时间Delay time
t
d
V
CC
=3V, V
BE(off)
=-
35
nS
Marking：K6N
信展通电子X·T ELECTRONICS
Apr.2019 Rev.B
MMDT3904
2
0.5V, I
C
=10mA ,
I
B1
=-I
B2
= 1mA
上升时间Rise time
t
r
35
nS
存储时间Storage time
t
s
V
CC
=3V,
I
C
=10mA,
I
B1
=-I
B2
=1mA
200
nS
下降时间Fall time
t
f
50
nS
典型特性曲线Typical Characteristics Curve