BZT52CxxS Series
信展通电子X·T ELECTRONICS
2020/4/22-G
SOD-323
特征 Features
SOD-323
贴片塑封稳压二极管
SOD-323 Plastic-Encapsulate Zener Diode
齐纳击穿阻抗低; Low Zener Impedance
最大功率耗散 200mW; Power Dissipation of 200mW
高稳定性和可靠性。High Stability and High Reliability
机械数据 Mechanical Data
封装: SOD-323 封 装 SOD-323 Small Outline Plastic Package
极性: 色环端为负极Polarity: Color band denotes cathode end
安装位置: 任意 Mounting Position: Any
极限值和温度特性(
TA = 25
℃
除非另有规定)
Maximum Ratings & Thermal Characteristics (
Ratings at 25
℃
ambient temperature unless otherwise specified.)
参数
Parameters
数值 Value
单位
Unit
功率消耗
Power Dissipation
200
1)
mW
热阻Thermal Resistance from Junction to Ambient
625
℃/W
正向压降Forward Voltage @IF=10mA
0.9
2)
V
工作结温
Junction/Operating Temperature
150
℃
存储温度Storage temperature range
-65-+150
℃
1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm²
2) Short duration test pulse used to minimize self-heating effect
电特性 (TA = 25℃ 除非另有规定)
Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).
Device
Marking
Zener Voltage Range
Maximum Zener
Impedance
3)
Maximum
Reverse Current
Typical
Temperature
coefficent @
IZTC=mV/℃
Test
Current
IZTC
Vz@Izt
Izt
Zzt
@Izt
Zzk
@Izk
Izk
IR
VR
Nom(V)
Min(V)
Max(V)
mA
Ω
mA
uA
V
Min
Max
mA
BZT52C2V0S
WY
2.0
1.80
2.15
5
150
600
1.0
100
1.0
-3.5
0
5
BZT52C2V4S
WX
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
5
BZT52C6V2S
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52CxxS Series
信展通电子X·T ELECTRONICS
2020/4/22-G
Device
Marking
Zener Voltage Range
Maximum Zener
Impedance
Maximum
Reverse Current
Typical
Temperature
coefficent @
IZTC=mV/℃
Test
Current
IZTC
Vz@Izt
Izt
Zzt
@Izt
Zzk
@Izk
Izk
IR
VR
Nom(V)
Min(V)
Max(V)
mA
Ω
mA
uA
V
Min
Max
mA
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30S
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33S
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36S
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39S
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52C43S
WU
43
40.0
46.0
2
100
700
1.0
0.1
32.0
10.0
12.0
5
BZT52C47S
WV
47
44.0
50.0
2
100
750
1.0
0.1
35.0
10.0
12.0
5
BZT52C51S
WW
51
48.0
54.0
2
100
750
1.0
0.1
38.0
10.0
12.0
5
BZT52C56S
XW
56
52.0
60.0
2
135
700
1.0
0.1
39.0
10.0
12.0
5
BZT52C62S
6E
62
58.0
66.0
2
200
1000
1.0
0.2
47.0
10.0
12.0
5
BZT52C68S
6F
68
64.0
72.0
2
250
1000
1.0
0.2
52.0
10.0
12.0
5
BZT52C75S
6H
75
70.0
79.0
2
300
1000
1.0
0.2
57
10.0
12.0
5