Furukawa’s one-stop-manufacturing provide highly reliable
and totally well-balanced DDF
with original DAF and DC tape.
Core Technology of AF Series
Original technology in AT & FUNCTIONAL PLASTICS
DIVISION is development and production of tape for
semiconductor field.
Based on those technologies such as sheet
manufacturing, blending knowhow of high-polymer
material, and adhesion control, original die attach film is newly released. Including dicing tape for die
attach film, Furukawa electric provides well-balanced products as “AF Series”.
FURUKAWA Die Attach Film
Backing film
(Furukawa Original)
Adhesive
(Furukawa Original)
DAF
（Furukawa Original)
Furukawa original design
Highly reliable and
totally well-balanced DDF
・ Sheet manufacturing knowhow
・ Blending knowhow of high-polymer material
・ Adhesion control knowhow
・ Original die attach film
No
bleed out
Furukawa
Competitor A
Competitor B
Competitor C
Pick up
performance
DDS
performance
No void &
No die shift
Good warpage
performance
DDF Construction Performance Balance Chart
https://www.furukawa.co.jp/uvtape/en
Japan
5-1-9, Higashi-yawata, Hiratsuka, 254-0016, Japan
Tel : 81-463-24-8333 FAX : 81-463-24-8338 Email : fec.at-tape@furukawaelectric.com
PE-064 2206 TR 100
Export Control Regulations
The products and/or technical information presented in this publication may be subject to the application of the Foreign Exchange and Foreign
Trade Act and other related laws and regulations in Japan. In addition, the Export Administration Regulations (EAR) of the United States may
be applicable. In cases where exporting or reexporting the products and/or technical information presented in this publication, customers are
requested to follow the necessary procedures at their own responsibility and cost. Please contact the Ministry of Economy, Trade and Industry
of Japan or the Department of Commerce of the United States for details about procedures.
* Technical information and data shown in this brochure should be considered representative or typical only and should not be used for specification purposes.
* Please understand that contents of this catalog may change without notice.
* Company and product names appearing in this publication are registered trademarks or trademarks of respective companies.
Lead frame / Substrate
Mold
Wafer Chip
AFN603
AFN303
AFN601
AFN601
AFN603
Die to Substrate Die to Die Film on Wire (FOW)
AFN303 AFN601
Properties
Features
DAF Type AFN603 AFN303 AFN601
Curing Condition*
150 deg.C, 60 min
or
180 deg.C, 60 min
150 deg.C, 60 min
150 deg.C, 60 min or
120 deg.C, 60 min
(Half Cure)
Ramp UP Time to Curing Temperature 30 min 30 min 30 min
DAF Thickness µm 20 / 25 / 50 10 50 / 60 / 80
General DC Tape Type UV type UV type UV type
DC Tape Thickness µm 100 100 100
Recommended UV Dosage mJ/cm
2
200 200 200
CTE
arpha1 ppm/K 37 33 26
arpha2 ppm/K 132 125 80
Tg (TMA) deg.C 115 120 156
Meltling Viscosity
70 deg.C Pa･s 37400 25000 16000
120 deg.C Pa･s 2000 1350 1600
Elastic Modulus
50 deg.C MPa 2900 4500 6000
250 deg.C MPa 56 100 650
Water Absorption, 85 deg.C, 85%, 100 h wt% 0.8 0.8 0.7
Die Shear Strength
2×2 mm Si Die to Si Mirror Wafer
@
Room temperature
MPa 60 60 50
@ 260 deg.C MPa 12 12 16
*
When die attach void is happened, step curing (120 deg.C, 60 min + 150 deg.C, 60 min) is recommended
Advantages
Good warpage
performance
DDS
performance
No void
No die shift
Pick up
performance
No bleed out
Competitor
AFN Serise
Competitor
AFN Serise
Cool
expand