General Features
● V
DS
=-60V,I
D
=-1.6A
R
DS(ON)
<160mΩ @ V
GS
=-10V
R
DS(ON)
<200mΩ @ V
GS
=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Load switch
● PWM application
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
-60 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
-1.6 A
Pulsed Drain Current
(Note 1)
I
DM
-8 A
Maximum Power Dissipation
P
D
1.5 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
θJA
83.3
/W℃
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=-250μA -60 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=-60V,V
GS
=0V - - -1 μA
P-Channel
Power MOSFET
SL2309
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Parameter Symbol Condition Min Typ Max Unit
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=-250μA -1.4 -2.0 -2.6 V
V
GS
=-10V, I
D
=-1.5A - 140 160 mΩ
Drain-Source On-State Resistance R
DS(ON)
V
GS
=-4.5V, I
D
=-1.5A - 160 200 mΩ
Forward Transconductance g
FS
V
DS
=-5V,I
D
=-1.5A - 3 - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 444.2 - PF
Output Capacitance C
oss
- 19.6 - PF
Reverse Transfer Capacitance C
rss
V
DS
=-30V,V
GS
=0V,
F=1.0MHz
- 17.9 - PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 40 - nS
Turn-on Rise Time t
r
- 35 - nS
Turn-Off Delay Time t
d(off)
- 15 - nS
Turn-Off Fall Time t
f
V
DD
=-30V, I
D
=-1.5A，
V
GS
=-10V,R
G
=3Ω
- 10 - nS
Total Gate Charge Q
g
- 11.3 - nC
Gate-Source Charge Q
gs
- 2.7 - nC
Gate-Drain Charge Q
gd
V
DS
=-30,I
D
=-1.5A,
V
GS
=-10V
- 1.6 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=-1.5A - -1.2 V
Diode Forward Current
(Note 2)
I
S
- - -1.6 A
Reverse Recovery Time
t
rr
- 25 nS
Reverse Recovery Charge
Qrr
T
J
= 25°C, I
F
=- 1.5A
di/dt = -100A/μs
(Note3)
- 31 nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
SL2309SL2309
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