N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
100V
● I
D
2.0A
● R
DS(ON)
( at V
GS
=10V)
＜310 mohm
● R
DS(ON)
( at V
GS
=4.5V)
＜350 mohm
General Description
��� Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low R
DS(ON)
● MSL LEVEL1
Applications
● DC-DC Converters
● Power management functions
■
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Symbol
Limit Unit
Drain-source Voltage V
DS
100
V
Gate-source Voltage V
GS
±20
V
Drain Current
T
A
=25℃
I
D
2.0
A
T
A
=70℃
1.6
Pulsed Drain Current
A
I
DM
8 A
Total Power Dissipation @ T
A
=25℃
P
D
1.2 W
Thermal Resistance Junction-to-Ambient
B
R
θJA
105
℃/ W
Junction and Storage Temperature Range T
J
,T
STG
-55～+150 ℃
SL2328A
1
www.slkormicro.com
■
Electrical Characteristics (T
J
=25℃ unless otherwise noted)
Parameter
Symbol
Conditions Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
=250μA 100 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=100V,V
GS
=0V 1 μA
Gate-Body Leakage Current
I
GSS1
V
GS
= ±20V, V
DS
=0V ±100
nA
I
GSS2
V
GS
= ±10V, V
DS
=0V ±50
nA
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
=250μA 1.1 1.8 3.0 V
Static Drain-Source On-Resistance R
DS(ON)
V
GS
= 10V, I
D
=2.0A 240 310
mΩ
V
GS
= 4.5V, I
D
=2.0A 250 350
Diode Forward Voltage V
SD
I
S
=2A,V
GS
=0V 0.8 1.2 V
Maximum Body-Diode Continuous Current I
S
2.0 A
Dynamic Parameters
Input Capacitance C
iss
V
DS
=10V,V
GS
=0V,f=1MHZ
387
pF Output Capacitance C
oss
31
Reverse Transfer Capacitance C
rss
28
Switching Parameters
Total Gate Charge Q
g
V
GS
=10V,V
DS
=50V,I
D
=2.0A
9.56
nC Gate-Source Charge Q
gs
1.81
Gate-Drain Charge Q
gd
1.97
Turn-on Delay Time t
D(on)
V
GS
=10V,V
DD
=50V, I
D
=1.3A,R
L
=39Ω
R
GEN
=1Ω
4
ns
Turn-on Rise Time t
r
17.8
Turn-off Delay Time t
D(off)
13.2
Turn-off fall Time t
f
28
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
SL2328A
2
www.slkormicro.com