0
Features
• Excellent package for good heat dissipation
• Ultra low gate charge
• Low reverse transfer capacitance
• Fast switching capability
• Avalanche energy specified
Symbol Rating Unit
V
DS
30 V
V
GS
±20 V
T
J
150 °C
T
STG
-50 to 155 °C
I
S
Tc=25°C 100 A
I
DM
Tc=25°C 400 A
I
D
Tc=25°C 100 A
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Tc=25°C 54
Diode Continuous Forward Current
Mounted on Large Heat Sink
Pulse Drain Current Tested
Continuous Drain Current@GS=10V
P
D
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
E
AS
Single pulse avalanche energy 100 mJ
Maximum Power Dissipation W
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
Gate-Source Voltage
D1
S1
D2
Schematic diagram
Marking and pin assignment
TO-252 top view
Product Summary
VDS
30 V
RDS(ON)@10V,MAX
3.5 mΩ
ID
100 A
Application
• Power switching application
D
G
D
S
D
G
D
S
N-Channel Enhancement Mode Field Effect Transistor
SL100N03
1
www.slkormicro.com
Symbol Parameter Condition Min Typ Max Unit
BV
(BR)DSS
Drain-Source Breakdown Voltage VGS=0V，ID=250μA 30 -- -- V
I
DSS
Zero Gate Voltage Drain Current VDS=30V，VGS=0V -- -- 1 uA
I
GSS
Gate-Body Leakage Current VGS=±20V，VDS=0V -- -- ±100 nA
V
GS(th)
Gate Threshold Voltage VDS=VGS，ID=250μA 1 -- 3 V
VGS=10V， ID=40A -- 3 3.5
VGS=4.5V，ID=30A -- 5 6.5
C
ISS
Input Capacitance -- 2550 -- pF
C
OSS
Output Capacitance -- 380 -- pF
C
RSS
Reverse Transfer Capacitance -- 290 -- pF
Q
g
Total Gate Charge -- 53 -- nC
Q
gs
Gate Source Charge -- 9 -- nC
Q
gd
Gate Drain Charge -- 13 -- nC
t
d(on)
Turn-on Delay Time -- 17 -- nS
t
r
Turn-on Rise Time -- 43 -- nS
t
d(off)
Turn-Off Delay Time -- 110 -- nS
t
f
Turn-Off Fall Time -- 105 -- nS
VSD
Forward on voltage Tj=25℃，Is=40A， -- -- 1.2 V
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
R
DS(on)
Drain-Source On-State Resistance mΩ
VDD=15V，ID=30A，
VGS=10V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
VDS=30V，VGS=0V，
f=1MHz
Switching Characteristics
VDD=15V，ID=30A，
VGS=10V，RG=12Ω
Source- Drain Diode Characteristics
2
www.slkormicro.com
SL100N03