The
SL2307
uses advanced trench technology to provide excellent
R
DS(on)
with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
��� V Units
Drain-Source voltage V
DS
-30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
-4.1 A
Drain Current-Pulsed I
DM
-20 A
Power Dissipation P
D
300
mW
Thermal Resistance from Junction to Ambient R
JA
417
/W
Junction Temperature T
J
150
Storage Temperature T
STG
-55~ +150
SOT-23
1. GAT
E
2. SOURCE
3. DRAIN D
V
(BR)DSS
R
DS(on)
MAX
I
D
-30V
\60mΩ@
-10 V
-4.1A
87 mΩ
-4.5V
@
Equivalent Circuit
P-Channel MOSFET
SL2307
1
www.slkormicro.com
Drain-source breakdown voltage V
(BR) DSS
V
GS
= 0V, I
D
=-250µA -30
V
Ze
ro gate voltage drain current I
DSS
V
DS
=-24V,V
GS
= 0
V
-1 µA
Gate -source leakage current I
GSS
V
GS
=±20V, V
DS
= 0V
±100 nA
V
GS
=-10V, I
D
=-4.1A
60 m
Drain-source on-resistance (note 1) R
DS(on)
V
GS
=-4.5V,
I
D
=-3A
87 m
Forward tranconductance (note 1) g
FS
V
DS
=-5V, I
D
=-4A
5.5
S
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=-250µA -1
-3 V
Diode forward voltage (note 1) V
SD
I
S
=-1A,V
GS
=0V
-1
V
(note 2)
Input capacitance C
iss
700 pF
Output capacitance
C
oss
120 pF
Reverse transfer capacitance C
rss
V
DS
=-15V,V
GS
=0V,f =1MHz
75 pF
(note 2)
Turn-on delay time t
d(on)
8.6 ns
Turn-on rise time t
r
5.0 ns
Turn-off delay time t
d(off)
28.2 ns
Turn-off fall time t
f
V
GS
=-10V,V
DS
=-15V,
R
L
=3.6,R
GEN
=3
13.5 ns
1. Pulse test: Pulse width 300µs, Duty cycle 2%.
2. These parameter have no way to verify.
MOSFET ELECTRICAL CHARACTERISTICS
T =25
℃
unless otherwise specified
a
2
www.slkormicro.com
SL2307