General Features
● V
DS
=80V,I
D
=100A
R
DS(ON)
< 12mΩ @ V
GS
=10V
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E
AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
TO-220-3L top view
SL100N08
N-Channel
Power MOSFET
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Symbol Parameter Limit Unit
V
DS
Drain-Source Voltage 80 V
V
GS
Gate-Source Voltage ±20 V
I
D
Drain Current-Continuous
100 A
I
D
(100℃)
Drain Current-Continuous(TC=100℃) 70 A
I
DM
Pulsed Drain Current
200 A
P
D
Maximum Power Dissipation 89 W
Derating factor 1.33 W/℃
E
AS
Single pulse avalanche energy
(Note 5)
80 mJ
T
J
,T
STG
Operating Junction and Storage Temperature Range -55 To 175 ℃
1
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Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦
300us , duty cycle ≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=50V,V
GS
=10V,L=0.1mH,I
AS
=40A
4.The power dissipation is limited by 175℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
,
in real applications , should be limited by total power dissipation.
Thermal Characteristic
R
θJC
Thermal Resistance,Junction-to-Case
(Note 2)
0.65 /W℃
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Symbol Parameter Condition Min Typ Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V I
D
=250μA 80 - - V
I
DSS
Zero Gate Voltage Drain Current V
DS
=100V,V
GS
=0V - - 1 μA
I
GSS
Gate-Body Leakage Current V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
,I
D
=250μA 1.2 - 2.5 V
R
DS(ON)
Drain-Source On-State Resistance V
GS
=10V, I
D
=13.5A - 9.6 12 mΩ
g
FS
Forward Transconductance V
DS
=50V,I
D
=40A - 32 - S
Dynamic Characteristics
(Note4)
C
lss
Input Capacitance - 3120 - PF
C
oss
Output Capacitance - 140 - PF
C
rss
Reverse Transfer Capacitance
V
DS
=50V,V
GS
=0V,
F=1.0MHz
- 110 - PF
Switching Characteristics
(Note 4)
t
d(on)
Turn-on Delay Time - 12.2 - nS
t
r
Turn-on Rise Time - 24.5 - nS
t
d(off)
Turn-Off Delay Time - 50.5 - nS
t
f
Turn-Off Fall Time
V
DD
=50V,I
D
=40A
V
GS
=10V,R
GEN
=2.5Ω
- 17.6 - nS
Q
g
Total Gate Charge - 60.9 - nC
Q
gs
Gate-Source Charge - 8.1 - nC
Q
gd
Gate-Drain Charge
V
DS
=80V,I
D
=40A,
V
GS
=10V
- 17.9 - nC
Drain-Source Diode Characteristics
V
SD
Diode Forward Voltage
(Note 3)
V
GS
=0V,I
S
=40A - - 1.2 V
I
S
Diode Forward Current
(Note 2)
- - - 57 A
t
rr
Reverse Recovery Time
- 18.6 nS
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = 40A
di/dt = 100A/μs(Note3)
- 65 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-
-
SL100N08
2
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