Production specification
Silicon Planar Epitaxial Transistor
2SA1213
1
FEATURES
z Low saturation voltage
z High speed switching time
z Small flat package
z P
C
=1.0 to 2.0W(mounted on ceramic substrate)
z Complementary to 2SC2873
SOT-89
ORDERING INFORMATION
Type No. Marking Package Code
2SA1213 NO/NY SOT-89
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-50 V
V
CEO
Collector-Emitter Voltage
-50 V
V
EBO
Emitter-Base Voltage
-5 V
I
C
Collector Current
-2 A
I
B
Base Current
-0.4 A
P
C
Collector Dissipation
500
1000(Note1)
mW
T
j,
T
stg
Junction and Storage Temperature
-55 to +150 ℃
Note1:Mounted on ceramic substrate(250mm
2
*0.8t)
Pb
Lead-free
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Production specification
Silicon Planar Epitaxial Transistor
2SA1213
2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-10mA,I
B
=0 -50 V
Collector cut-off current
I
CBO
V
CB
=-50V,I
E
=0 -0.1 μA
Emitter cut-off current
I
EBO
V
EB
=-5V,I
C
=0 -0.1 μA
V
CE
=-2V,I
C
=-0.5A 70 240
DC current gain
h
FE
V
CE
=-2V,I
C
=-2.0A 20
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-1A,I
B
=-0.05A
-0.5 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-1A,I
B
=-0.05A
-1.2 V
Transition frequency
f
T
V
CE
=-2V, I
C
=-0.5A
120 MHz
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
40 pF
CLASSIFICATION OF h
FE
Rank O Y
Range 70-140 120-240
Marking NO NY
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