Production specification
Single Line TVS Diode
GESDXVXD3
1
FEATURES
z Suitable replacement for MLV’S
ESD protection
z Low leakage current
z Low clamping voltage
APPLICATIONS
z Single line TVS diode SOD-323
z Computers and peripherals
z Communication systerms
z Audio and video equipment
ORDERING INFORMATION
Type No. Marking Package Code
GESD3V3D3 N1 SOD-323
GESD5V0D3 5U SOD-323
GESD12VD3 N3 SOD-323
GESD15VD3 N4 SOD-323
GESD24VD3 N5 SOD-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Reverse standoff voltage GESD3V3D3
GESD5V0D3
GESD12VD3
GESD15VD3
GESD24VD3
V
RWM
3.3
5
12
15
24
V
Peak pulse power dissipation(t
p
=8/20μs) GESD3V3D3
GESD5V0D3
GESD12VD3
GESD15VD3
GESD24VD3
P
PP
330
260
180
160
160
W
Peak pulse current(t
p
=8/20μs) GESD3V3D3
GESD5V0D3
GESD12VD3
GESD15VD3
GESD24VD3
I
PP
18
15
5
5
3
A
Pb
Lead-free
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Production specification
Single Line TVS Diode
GESDXVXD3
2
Parameter Symbol Limits Unit
ESD (electrostatic discharge capability) GESD3V3D3
GESD5V0D3
GESD12VD3
GESD15VD3
GESD24VD3
V
PP
30
30
30
30
23
kV
Junction temperature T
j
150
℃
Storage and operating temperature T
STG
T
amb
-65 to+150
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Conditions Min Typ Max Units
Reverse breakdown
voltage
V
BR
I
R
=5mA
GESD3V3D3
GESD5V0D3
GESD12VD3
GESD15VD3
GESD24VD3
5.2
6.4
14.7
17.6
26.5
5.6
6.8
15.0
18.0
27
6.0
7.2
15.3
18.4
27.5
V
Reverse leakage current I
R
V
RWM
=3.3V
V
RWM
=5V
V
RWM
=12V
V
RWM
=15V
V
RWM
=24V
2
1
50
50
50
μA
μA
nA
nA
nA
Diode capacitance C
d
V
R
=0V,f=1MHz
GESD3V3D3
GESD5V0D3
GESD12VD3
GESD15VD3
GESD24VD3
207
152
38
32
23
300
200
75
70
50
pF
I
PP
=1A 7
GESD3V3D
I
PP
=18A 20
I
PP
=1A 9
GESD5V0D3
I
PP
=15A 20
I
PP
=1A 19
GESD12VD3
I
PP
=5A 35
I
PP
=1A 23
GESD15VD3
I
PP
=5A 40
I
PP
=1A 36
Clamping voltage
V
(CL)
GESD24VD3
I
PP
=3A 70
V
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