Production specification
Schottky Barrier Diode
MMBD717
1
FEATURES
z Extremely fast switching speed.
z Extremely low forward voltage-
0.28V(Typ)@I
F
=1mA.
z Common anode.
APPLICATIONS
z High speed switching application ,circuit protection SOT-323
and voltage clamping.
ORDERING INFORMATION
Type No. Marking Package Code
MMBD717 B3 SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic Symbol Limits Unit
DC Reverse Voltage
V
R
20 V
Power Dissipation
P
d
200 mW
Operating Junction Temperature Range
T
j
150 ℃
Storage Temperature Range
T
STG
-55 to +150 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Characteristic Symbol Min TYP MAX UNIT Test Condition
Reverse Breakdown Voltage V
(BR)R
20
- V I
R
= 10μA
Forward Voltage V
F
- 0.28 0.37 V I
F
=1.0mA
Reverse Leakage Current I
R
- 0.05 1.0
μA
V
R
=10V
Diode Capacitance C
D
- 2.0 2.5 pF V
R
=1.0V,f=1MHz
Pb
Lead-free
www.tasund.com
Production specification
Schottky Barrier Diode
MMBD717
2
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
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