Production specification
Dual Hot-Carrier Diodes
MMBD452
1
FEATURES
z Very low capacitance.
z Extremely low minority carrier lifetime.
z Low reverse leakage.
z Power dissipation P
d
=225mW.
APPLICATIONS
z Designed primarily for UHF and VHF detector SOT-23
applications.
ORDERING INFORMATION
Type No. Marking Package Code
MMBD452 5N
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Continuous reverse voltage
V
R
30 V
Power Dissipation
P
d
225 mW
Operating junction temperature range
T
J
-55 to +125 ℃
Junction and storage temperature
T
STG
-55 to +150 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Breakdown Voltage V
(BR)
30 V I
R
=10μA
Forward voltage V
F
0.38
0.52
0.45
0.6
V
I
F
=1.0mA
I
F
=10mA
Reverse current I
R
13 200 nA V
R
=25V
Total Capacitanc C
T
0.9 1.5 pF V
R
=15V,f=1MHz
Pb
Lead-free
www.tasund.com
Production specification
Dual Hot-Carrier Diodes
MMBD452
2
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
www.tasund.com