Production specification
Dual Hot Carrier Mixer Diodes
MMBD352/353/354/355
1
FEATURES
z Very low capacitance—
Less than 1.0pF@zero V.
z Low forward voltage—I
F
=10mA. MMBD352 MMBD353
z Power dissipation P
d
=300mW
z Pb-Free package is available.
APPLICATIONS
MMBD354 MMBD355
z Designed primarily for UHF mixer
applications.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBD352 M5G
SOT-23
MMBD353 M4F
SOT-23
MMBD354 M6H SOT-23
MMBD355 MJ1 SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Continuous reverse voltage
V
R
7.0 V
Power Dissipation
P
d
300 mW
Thermal Resistance,Junction-to-Ambient
R
θJA
417 ℃/W
Junction and storage temperature
T
J
,T
STG
-55 to +150 ℃
Pb
Lead-free
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Production specification
Dual Hot Carrier Mixer Diodes
MMBD352/353/354/355
2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Breakdown Voltage V
(BR)
7.0 V I
R
=100μA
Forward voltage V
F
0.60 V I
F
=10mA
Reverse current I
R
0.25
10
μA
V
R
=3.0V
V
R
=7.0V
Diode Capacitanc C
D
1.0 pF V
R
=0V,f=1MHz
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
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