Production specification
Schottky Barrier Diode MMBD330/MMBD770
1
FEATURES
z Extremely low minority carrier lifetime.
z Very low capacitance.
z Low reverse leakage.
APPLICATIONS
z For high-efficiency UHF and VHF detector application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
MMBD330 4T SOT-323
MMBD770 5H SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Reverse voltage MMBD330
MMBD770
V
R
30
70
V
Forward Continuous Current (DC) I
F
200 mA
Peak Forward Surge Current I
FSM
1.0 A
Power Dissipation P
d
120 mW
Junction temperature T
j
150
℃
Storage temperature range T
stg
-55 to +150
℃
Pb
Lead-free
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Production specification
Schottky Barrier Diode MMBD330/MMBD770
2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Reverse Breakdown voltage
MMBD330
MMBD770
V
(BR)R
I
R
=100μA
30
70
V
Reverse current MMBD330
MMBD770
I
R
V
R
=25V
V
R
=35V
200
200
nA
Forward voltage MMBD330
MMBD770
V
F
I
F
=1.0mA
I
F
=10mA
I
F
=1.0mA
I
F
=10mA
0.45
0.60
0.50
1.0
V
Diode capacitance MMBD330
MMBD770
C
D
V
R
=15V,f=1MHz
V
R
=20V,f=1MHz
0.9
0.5
pF
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
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