SURFACE MOUNT FAST SWITCHING DIODE
DN:T19A29A0
http://www.microdiode.com Rev:2019A0 Page :1
1N4148W
SOD-123
Dimensions in inches and (millimeters)
Mechanical Data
Case : SOD-123
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight
: 0.00056 ounce, 0.016 grams
0.080 (0.0031)
1.050 (0.041)
0.150 (0.0059)
1.250 (0.049)
0.008 (0.2 )
0.018 (0.45)
0.010 (0.25)
0.019 (0.475) ref.
0° to 8°
0.110(2.80)
0.098(2.50)
Cathode bar
0.071(1.80)
0.028(0.70)
0.020(0.50)
0.154 (3.90)
0.142 (3.60)
0.059(1.50)
0.008(0.20)max.
Marking
T4
FEATURES
1N4148W SWITCHING DIODE
Fast Switching Speed
Surface Mount Package
For General Purpose Switching Applications
S
t
o
rag
e Temp
eratu
r
e
T
ST
G
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified)
Parameter
Symbo
Limit Unit
Non-Repetitive Peak Reve
rse Voltage V
RM
100 V
Peak Rep
etitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RW
M
V
R
100
Maximum RMS Voltage V
RMS
75
V
Forwa
rd Continuous Current I
FM
300 mA
A
v
e
r
ag
e R
ecti
f
ied
Ou
tp
u
t
Cu
rren
t
I
O
150
mA
Fo
rw
ard Surge
C
t=1S
I
FSM
0.5
A
Po
w
e
r Dissip
a
tio
n
Pd
400
mW
The
rmal Resistance Junction to Ambient R
θJA
250
℃/W
Junction
Temperature T
j
150 ℃
℃
Non-Repetitive Peak
urrent
@
Pa
rameter
Symbol Test conditions Min Max Unit
Re
vers
e breakdown voltage
V
(BR)
R
=I 100µA 75 V
Reve
rse voltage leakage current
I
R
R
=V75V
1
For
w
a
rd voltage
V
F
I
F
=1mA
I
F
=10mA
I
F
=
50mA
I
F
=
150mA
0.715
0.855
1
1.25
V
Capacitance between terminals
C
T
R
=V0, f=1MHz 2
pF
Re
v
eres re
covery time
t
rr
I
F
=I
R
=
10mA,I
rr
=0.
1×I
R,
R
L
=100Ω
4
ns
µA
V
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
The above data are for reference only.
V
R
=20V
0.025
t=1mS
t=1uS
1.0
4.0
Rev:2019A0 Page :2
Typical Characterisitics
The curve above is for reference only.
http://www.microdiode.com
1N4148W
100
200
300
400
500
0.0
25 50
75
100 125 150 175
Fig.1 Power Derating Curve
Total Power Dissipation (mW)
Ambient Temperature (°C)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (mA)
0.2 0.4 0.6 1.2 1.40.0
1.0
10
1000
Instaneous Forward Voltage (V)
Fig.4 Typical Junction Capacitance
Junction Capacitance (pF)
1.0 10 1000.1
0.1
1.0
10
Reverse Voltage (V)
T
J
=25°C
Fig.2 Typical Reverse Characteristics
0.01
0.1
1
100
20 40 60 80 100 12000
percent of Rated Peak Reverse Voltage (%)
Instaneous Reverse Current（μA）
10
T
J
=25°C
T
J
=150°C
0.8 1.0 1.6
100
T
J
=25°C