FEATURES
Small Package
Low Reverse Current
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
MARKING:T4
M
AXI
MUM RATINGS
(
T
a
=25℃ unless otherwise noted )
ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Reverse voltage
V
(BR)
I
R
=1μA
75 V
V
R
=75V 1 µA
Reverse current
I
R
V
R
=20V 25 nA
I
F
=1mA
0.715
V
I
F
=10mA
0.855
V
I
F
=50mA
1
V
Forward voltage
V
F
I
F
=150mA
1.25
V
Tot
al capacitance
C
tot
V
R
=0V,f=1MHz 2 pF
Rev
erse recovery time
t
rr
I
F
= I
R
=10mA, I
rr
=0.1*I
R
,R
L
=100Ω
4 ns
SOD-523 Plastic-Encapsulate Diodes
1N4148WT FAST SWITCHING DIODE
The marking bar indicates the cathode
DN:T20417A0
http://www.microdiode.com Rev:2020A0 Page :1
1N4148WT
SOD-523
Symbol Parameter Value Unit
V
RM
1
00 V
V
R
V
RR
M
V
RW
M
7
5 V
V
R(
RMS)
5
3 V
I
O
150 m
A
I
FM
300 m
A
2
A
I
FSM
P
D
1
50 mW
R
ΘJ
A
833
℃/W
T
j
150
℃
T
s
tg
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
1RQUHSHWLWLYH3HDN)RUZDUG6XUJH&XUUHQW#W
PV
Power Dissipation
Thermal Resistance from Junction to Ambient Junction
Temperature
Storage Temperature
-55~+150
℃
T4
T
ypical Characteristics
0
25 50 75 100 125 150
0
50
100
150
200
0.0
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
02
04060
1
10
100
1000
0
5 10 15 20
0.8
0.9
1.0
1.1
1.2
Forward C haracteristics
Reverse Characteristics
Power Derating Curve
POWER DISSIPATION P
D
(mW)
AMBIENT TEMPERATURE T
a
( )℃
T
a
=
1
0
0
℃
T
a
=
2
5
℃
FORWARD CURRENT I
F
(mA)
FORWARD VOLTAGE V
F
(V)
200
T
a
=100
℃
T
a
=25
℃
REVERSE CURRENT I
R
(nA)
REVERSE VOLTAGE V
R
(V)
T
a
=25
℃
f=1MHz
Capacitance C h aracteristics
REVERSE VOLTAGE V
R
(V)
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
http://www.microdiode.com Page : 2Rev:2020A0
1N4148WT
80