Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
18 A
Drain Current-Continuous(T
A
=100℃) I
D
(100℃) 13 A
Pulsed Drain Current
I
DM
50 A
Maximum Power Dissipation
P
D
3 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
R
θJA
42
/W℃
1 -
2012-7-8
-
30V N-Channel Enhancement Mode MOSFET
PT4430
VDS= 30V
RDS(ON), Vgs@ 1 0V, Ids@
18
A =
5.
5m
RDS
(
O
N),
V
g
s
@
5V
,
Ids
@
Ω
18
A =
7.
5m
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications
1
2
3
4
8
7
6
5
D1
S1
S1
G1
D2
S2
S2
G2
Millimeter Millimeter
REF.
Min. Max.
REF.
Min. Max.
A 1.20 MAX. E1
A2 0.80 1.05 0.45
b
C 0.90 0.20
D 2.90 3.00
.
A1 0.05
0.15
0.19
0.30
E 6.40BSC
4.30
4.50
e
0.65BSC
0° 10° θ
L
0.75
TSSOP-8
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 30 33 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=30V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250��A 1 1.6 3 V
V
GS
=10V, I
D
=9A - 5.5 7.5
Drain-Source On-State Resistance R
DS(ON)
V
GS
=5V, I
D
=9A - 7.5 10
mΩ
Forward Transconductance g
FS
V
DS
=5V,I
D
=18A 5 - - S
Dynamic Characteristics (No t e4)
Input Capacitance C
lss
- 2100 - PF
Output Capacitance C
oss
- 460 - PF
Reverse Transfer Capacitance C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
- 230 - PF
Switching Chara cteristics (Note 4)
Turn-on Delay Time t
d(on)
- 20 - nS
Turn-on Rise Time t
r
- 15 - nS
Turn-Off Delay Time t
d(off)
- 60 - nS
Turn-Off Fall Time t
f
V
DD
=10V,I
D
=9A
V
GS
=10V,R
GEN
=2.7Ω
- 10 - nS
Total Gate Charge Q
g
- 41 - nC
Gate-Source Charge Q
gs
- 14 - nC
Gate-Drain Charge Q
gd
V
DS
=10V,I
D
=10A,
V
GS
=10V
- 11 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) V
SD
V
GS
=0V,I
S
=9A - - 1.2 V
Diode Forward Current (Note 2) I
S
- - 18 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
2 -
2012-7-8
-
PT4430