JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2 Plastic-Encapsulate Transistors

MJD112 TRANSISTOR (NPN)

FEATURES

y Complementary darlington power transistors

dpak for surface mount applications

MAXIMUM RATINGS (T

A

=25℃ unless otherwise noted)

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage

100 V

V

CEO

Collector-Emitter Voltage

100 V

V

EBO

Emitter-Base Voltage

5 V

I

C

Collector Current -Continuous 2 A

P

C

Collector Power Dissipation 1 W

R

θ

JC

Thermal resistance, junction to case 6.25

℃/W

R

θ

JA

Thermal resistance, junction to Ambient 71.4

℃/W

T

J

Junction Temperature 150

℃

T

stg

S torage Temperature -55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage

V

(BR)CBO

I

C

=1mA,I

E

=0 100 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

=30mA,I

B

=0 100 V

Emitter-base breakdow n voltage

V

(BR)EBO

I

E

=5mA,I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=100V,I

E

=0 20 µA

Collector-emitter cut-off current

I

CEO

V

CE

=50V,I

E

=0 20 µA

Emitter cut-off current

I

EBO

V

EB

=5V,I

C

=0 2 mA

h

FE(1)

V

CE

=3V,I

C

=500mA 500

h

FE(2)

V

CE

=3V,I

C

=2A 1000 12000

DC current gain

h

FE(3)

V

CE

=3V,I

C

=4A 200

V

CE(sat)1

I

C

=2A,I

B

=8mA 2 V

Collector-emitter saturation voltage

V

CE(sat)2

I

C

=4A,I

B

=40mA 3 V

Base-emitter voltage

V

BE

V

CE

=3V,I

C

=2A 2.8 V

Transition frequency

f

T

V

CE

=10V,I

C

=0.75A,f=1MHz 25 MHz

Collector output capacitance

C

ob

V

CB

=10V,I

E

=0,f=0.1MHz 100 pF

TO-251

TO-252-2

1. BASE

2. COLLECTOR

3. EMITTER

MJD112

Http:// www .wej.cn E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.,LTD

RoHS

Typical Characteristics MJD112

Http:// www .wej.cn E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.,LTD

MJD112

RoHS