WEJ ELECTRONIC CO.,LTD
B772 TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
1.25 W(Tamb=25℃)
Collector current
I
CM:
-3 A
Collector-base voltage
V
(BR)CBO
: - 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
µA, I
E
=0
-40 V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= -10mA, I
B
=0 -30 V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100µA, I
C
=0
-6 V
Collector cut-off current
I
CBO
V
CB
= -40V, I
E
=0 -1 µA
Collector cut-off current
I
CEO
V
CE
= -30V, I
B
=0 -10 µA
Emitter cut-off current
I
EBO
V
EB
= -6V, I
C
=0 -1 µA
h
FE(1)
V
CE
= -2V, IC= -1A 60 400
DC current gain
h
FE(2)
V
CE
= -2V, I
C
= -100mA 32
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -2A, I
B
= -0.2 A -0.5 V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -2A, I
B
= -0.2 A -1.5 V
Transition frequency
f
T
V
CE
= -5V, Ic=-0.1A
f =10MHz
50 MHz
CLASSIFICATION OF hFE
(1)
Rank R O Y GR
Range
60-120 100-200 160-320 200-400
TO-251
TO-252-2
1. BASE
2.
COLLECTOR
3.
EMITTER
0. 51¡ À0.10
0. 51¡ À0.05
0¡ «0. 10
1
.
6
0
¡
À0
.
1
5
9
.
7
0
¡
À0
.
2
0
0
.
7
5
¡
À0
.
1
0
2. 30¡ À0. 10
6. 50¡ À0.15
5. 30¡ À0. 10
0. 60¡ À0. 10
0. 80¡ À0. 10
2. 30¡ À0.10
2
.
7
0
¡
À0
.
2
0
2. 30¡ À0.10
5
.
5
0
¡
À0
.
1
0
1. 20
¡«9¡ ã
0. 51
0
.
6
0¡ ã
5¡ ã
5¡ ã
5
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ã
1. 20
0. 51¡ À0. 03
5¡ ã
1
4
.
7
0
2. 30¡ À0. 05 2. 30¡ À0. 05
0. 80¡ À0. 05
0. 60¡ À0. 05
5. 30¡ À0. 05
6. 50¡ À0. 10
0. 51¡ À0. 03
7
.
7
0
2. 30¡ À0. 05
5
.
5
0
¡
À0
.
1
0
5¡ ã
5
¡
ã
1 2 3
1 2 3
B772
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WEJ ELECTRONIC CO.
RoHS