WEJ ELECTRONIC CO.,LTD

3DD13002 TRANSISTOR (NPN)

FEATURES

Power dissipation

P

CM:

1.25 W (Tamb=25℃)

Collector current

I

CM:

1 A

Collector-base voltage

V

(BR)CBO

: 600 V

Operating and storage junction temperature range

T

J

, T

stg

: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)

CBO

Ic= 100

µA, I

E

=0

600 V

Collector-emitter breakdown voltage

V(BR)

CEO

Ic=1mA, I

B

=0 400 V

Emitter-base breakdown voltage

V(BR)

EBO

I

E

= 100µA, I

C

=0

6 V

Collector cut-off current

I

CBO

V

CB

= 600V, I

E

=0 100 µA

Emitter cut-off current

I

EBO

V

EB

= 6V, I

C

=0 100 µA

h

FE(1)

V

CE

= 10V, I

C

= 200 mA 9 40

DC current gain

h

FE(2)

V

CE

= 10V, I

C

= 250 µA 5

Collector-emitter saturation voltage

V

CE

(sat) I

C

=200mA, I

B

= 40 mA 0.8 V

Base-emitter saturation voltage

V

BE

(sat) I

C

=200mA, I

B

= 40 mA 1.1 V

Transition frequency

f

T

V

CE

=10V, Ic=100mA

f =1MHz

5 MHz

Fall time

t

f

0.5 µs

Storage time

t

s

I

C

=1A, I

B1

=-I

B2

=0.2A

V

CC

=100V

2.5 µs

CLASSIFICATION OF h

FE

(2)

Rank

Range

9-15 15-20 20-25 25-30 30-35 35-40

1 2 3

TO-251

1. BASE

2. COLLECTOR

3. EMITTER

3DD13002

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