WEJ ELECTRONIC CO.,LTD

3DA752 TRANSISTOR (NPN)

FEATURES

Power dissipation

P

CM:

1.2 W (Tamb=25℃)

Collector current

I

CM:

2 A

Collector-base voltage

V

(BR)CBO

: 40 V

Operating and storage junction temperature range

T

J

, T

stg

: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage

V

(BR)CBO

Ic=

100µA, I

E

=0 40

V

Collector-emitter breakdown voltage

V

(BR)CEO

Ic=

10mA, I

B

=0 30

V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=1mA, I

C

=0 5

V

Collector cut-off current

I

CBO

V

CB

=40V, I

E

=0

0.1

µA

Emitter cut-off current

I

EBO

V

EB

=5V, I

C

=0

0.1

µA

DC current gain

h

FE(1)

V

CE

=2V, I

C

=500 mA 100

400

V

CE(sat)1

I

C

=2A, I

B

=0.2A

0.8

V

Collector-emitter saturation voltage

V

CE(sat)2

I

C

=1.5A, I

B

=30mA

2 V

Transition frequency

f

T

V

CE

=5V, I

C

=500 mA

120

MHz

Collector output capacitance

C

ob

V

CB

=10V, I

E

=0, f =1MHz

13

pF

CLASSIFICATION OF h

FE(1)

Rank O Y G

Range

100-200 160-320 200-400

Marking

1 2 3

TO-251

1. BASE

2. COLLECTOR

3. EMITTER

3DA752

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