WEJ ELECTRONIC CO.,LTD
2N7002T MOSFET ( N-Channel )
FEATURES
Power dissipation
P
D:
0.15 W (Tamb=25℃)
Collector current
I
D:
115 mA
Collector-base voltage
V
DS
: 60 V
Operating and storage junction temperature range
T
J,
T
stg:
-55℃ to +150℃
Marking: 72
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage *
V
(BR)DSS
V
GS
=0V,I
D
=10µA 60
Gate-Threshold Voltage*
V
th(GS)
V
DS
=V
GS
, I
D
=250µA 1 2
V
Gate-body Leakage*
l
GSS
V
DS
=0V, V
GS
=±20V ±10 nA
V
DS
=60V, V
GS
=0V 1
Zero Gate Voltage Drain Current *
I
DSS
V
DS
=60V,V
GS
=0V,T
j
=125℃
500
µA
On-state Drain Current *
I
D(ON)
V
GS
=10V, V
DS
=7.5V 500 1000 mA
V
GS
=5V, I
D
=50mA 3.2 7.5
Drain-Source On-Resistance *
R
DS(0n)
V
GS
=10V, I
D
=500mA 4.4 13.5
Ω
Forward Tran conductance *
g
FS
V
DS
=10V, I
D
=200mA 80 ms
Input Capacitance
C
iSS
22 50
Output Capacitance
C
OSS
11 25
Reverse Transfer Capacitance
C
rSS
V
DS
=25V, V
GS
=0V
f=1MHz
2 5
pF
SWITCHING
Turn-on Time
T
D(ON)
7 20
Turn-off Time
T
D(OFF)
V
DD
=30V,R
L
=150
I
D
=200mA,V
GEN
=10V
R
GEN
=25Ω
11 20
ns
* Pulse test.
SOT-523
1. GATE
2. SOURCE
3. DRAIN
2N7002T
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WEJ ELECTRONIC CO.
RoHS
WEJ ELECTRONIC CO.,LTD
2N7002T
Http:// www .wej.cn E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.