WEJ ELECTRONIC CO.,LTD.
2N7002 MOSFET (N-Channel)
FEATURES
z High density cell design for low R
DS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
Marking: 7002
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
DS
Drain-Source voltage 60 V
I
D
Drain Current 115 mA
P
D
Power Dissipation 225 mW
R
Ó¨JA
Thermal Resistance, junction to Ambient
556
℃/W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
=0 V, I
D
=10 μA
60
Gate-Threshold Voltage
V
th(GS)
V
DS
=V
GS
, I
D
=250 μA
1 2.5
V
Gate-body Leakage
l
GSS
V
DS
=0 V, V
GS
=±25 V
±80
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60 V, V
GS
=0 V 80 nA
On-state Drain Current
I
D(ON)
V
GS
=10 V, V
DS
=7 V 500 mA
V
GS
=10 V, I
D
=500mA
1 7.5
Drain-Source On-Resistance
r
DS(0n)
V
GS
=5 V, I
D
=50mA
1 7.5
Ω
Forward Trans conductance
g
fs
V
DS
=10 V, I
D
=200mA
80 500 ms
V
GS
=10V, I
D
=500mA
0.5 3.75 V
Drain-source on-voltage
V
DS(on)
V
GS
=5V, I
D
=50mA
0.05 0.375 V
Diode Forward Voltage
V
SD
I
S
=115mA, V
GS
=0 V 0.55 1.2 V
Input Capacitance
C
iss
50
Output Capacitance
C
OSS
25
Reverse Transfer Capacitance
C
rSS
V
DS
=25V, V
GS
=0V, f=1MHz
5
pF
SWITCHING TIME
Turn-on Time
t
d(on)
20
Turn-off Time
t
d(off)
V
DD
=25 V, R
L
=50Ω
I
D
=500mA,V
GEN
=10 V
R
G
=25 Ω
40
ns
SO
T
-23
1. GATE
2. SOURCE
3. DRAIN
2N7002
RoHS
Http:// www .wej.cn E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
WEJ ELECTRONIC CO.,LTD.
Typical characteristics
2N7002
RoHS
Http:// www .wej.cn E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.