GBU8005-GBU810
1
4
Maximum Ratings (@T
A
= 25°C unless otherwise specified)
Characteristic
Symbol
GBU
8005
GBU
802
GBU
804
GBU
806
GBU
808
GBU
810
Units
Peak repetitive reverse voltage
V
RRM
50
200
400
600
800
1000
V
RMS reverse voltage
V
RMS
35
140
280
420
560
700
V
DC blocking voltage
V
DC
50
200
400
600
800
1000
V
Maximum average forward output
current
I
F(AV)
8.0
A
Peak forward surge current,
8.3ms single half-sine-wave
@T
J
=
25°C
I
FSM
175
A
Current squared time
@1ms≤t≤8.3ms, Rating of
per diode
@T
J
=
25°C
I
2
t
127
A
2
s
Thermal Characteristics
Characteristic
Symbol
GBU
8005
GBU
802
GBU
804
GBU
806
GBU
808
GBU
810
Units
Between junction and ambient, Without
heatsink
R
ΘJA
55
°C /W
Between junction and case, With heatsink
R
ΘJC
1.2
Operating junction temperature range
T
J
- 55 ---- + 150
°C
Storage temperature range
T
STG
- 55 ---- + 150
°C
GBU8005-GBU810
2
4
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Test
conditions
GBU
8005
GBU
802
GBU
804
GBU
806
GBU
808
GBU
810
Units
Maximum instantaneous
forward voltage
V
F
I
F
=4.0A Per
Diode
1.0
V
Maximum Reverse
current Rated V
R
,
Per Diode
I
R
@T
A
=25°C
5
μ A