1N4148W
SOD123-K-1N4148W-300mA100V
第 1 页 共 3 页
FEATURES
▪
For surface mounted applications
▪
Glass Passivated Chip Junction
▪
Fast reverse recovery time
▪
Ideal for automated placement
▪
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
•
Case: SOD-123
•
Terminals: Solderable per MIL-STD-750, Method 2026
•
Approx. Weight: 16mg/ 0. 00056oz
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings at 25
°
C
Parameter
Symbols
1N4148W
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
100
V
Maximum RMS voltage
V
RMS
75
V
Continuous Forward Current
I
F
300
mA
Non-reptitive Peak Forward Surge Current at 1ms
I
FSM
4
A
Total Power Dissipation
P
tot
400
mW
Operating and Storage Temperature Range
T
j
, T
stg
-55 ~ +150
°C
Characteristics at
T
a
= 25
°
C
Parameter
Symbols
1N4148W
Units
Reverse BreakdownVoltage at I
R
=1μA
V
(BR)R
75
V
at 1 m A
0.715
at 10 m A
0.855
V
F
1.00
1.25
V
Maximum Forward Voltage
at 50 m A
at 150 m A
at 300 mA
1.5
at V
R
=20V T
j
=25°C
0.025
Peak Reverse Current
at V
R
=75V T
j
=25°C
at V
R
=25V T
j
=150°C
at V
R
=75V T
j
=150°C
I
R
1
30
50
μA
Typical Junction Capacitance f=1MHz,V
R
=4V
C
j
5
pF
( 1 )
Maximum Reverse Recovery Time
t
rr
Typical
8
ns
（1）Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
1N4148W
第 2 页 共 3 页
Fig.1 Power Derating Curve
Fig.2 Typical Reverse Characteristics
500
100
400
10
300
1
200
0.1
100
0.0
25 50 75 100 125 150 175
0.01
00 20 40 60 80 100 120
Ambient Temperature (°C) percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Typical Junction Capacitance
1000
100
=
100
10
10
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
0.1
1.0
10
100
Instaneous Forward Voltage (V) Reverse Voltage (V)
T
J
=25°C
T
J
=150°C
T
J
=25°C
T
J
25°
C
Instaneous Forward Current (mA)
Total Power Dissipation (mW)
Junction Capacitance (pF)
Instaneous Reverse Current
（
μ
A
）