■
Features
●
Collector
Current
Capability
I
C
=-3A
●
Collector
Emitter
Voltage
V
CEO
=-60V
●
High
speed
switching.
●
Complements
the
2SC5824
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector - Base Voltage V
CBO
-60
Collector - Emitter Voltage V
CEO
-60
Emitter - Base Voltage V
EBO
-6
Collector Current - Continuous I
C
-3
Collector Current - Pulse I
CP
-6
0.5
2
Junction Temperature T
J
150
Storage Temperature range T
stg
-55 to 150
V
℃
A
Collector Power Dissipation P
C
W
■
Electrical
Characteristics
Ta
=
25℃
Parameter Symbol Test
Conditions Min Typ Max Unit
Collector-
base
breakdown
voltage V
CBO
Ic=
-100
μA，
I
E
=0
-60
Collector-
emitter
breakdown
voltage V
CEO
Ic=
-1
mA，
I
B
=0
-60
Emitter
-
base
breakdown
voltage V
EBO
I
E
=
-100μA，
I
C
=0
-6
Collector-base
cut-off
current I
CBO
V
CB
=
-40
V
,
I
E
=0 -1
Emitter
cut-off
current I
EBO
V
EB
=
-4V
,
I
C
=0 -1
Collector-emitter
saturation
voltage V
CE(sat)
I
C
=-2
A,
I
B
=-200mA -0.5
Base
-
emitter
saturation
voltage V
BE(sat)
I
C
=-2
A,
I
B
=-200mA -1.2
DC
current
gain h
FE
V
CE
=
-2V,
I
C
=
-100mA 120 390
Turn-on
time t
on
20
Storage
time t
stg
150
Fall
time t
f
20
Collector
output
capacitance C
ob
V
CB
=
-10V,
I
E
=
0,f=1MHz 50 pF
Transition
frequency f
T
V
CE
=
-10V,
I
E
=
100
mA,f=10MHz 180 MHz
V
V
uA
I
C
=
−3A
I
B1
=
−300mA
I
B2
=300mA
V
CC
=
−25V
ns
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
SOT-89
Unit:mm
■
Classification
of
h
fe
Range 120-390
Marking
Product specification
2SA2071
Surface Mount PNP Silicon Power Transistor
UN Q*
第１页，共２页
ｗｗｗ．ｃｆｂｄｔ．ｃｎ
■ Typical Characterisitics
−0.01 −0.1 −1 −10
COLLECTOR CURRENT : I
C
(A)
Fig.1 Switching Time
10
100
SWITCHING TIME : (ns)
1000
Ta=25°C
V
CC
= −25V
I
C
/I
B
=10/1
Tstg
Tf
Ton
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : I
C
(A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
1
10
100
DC CURRENT GAIN : h
FE
1000
V
CE
= −2V
Ta=25°C
Ta= −40°C
Ta=125°C
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
1
10
100
DC CURRENT GAIN : h
FE
1000
Ta=25°C
V
CE
= −5V
V
CE
= −3V
V
CE
= −2V
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : I
C
(A)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
−0.01
−0.1
−1
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
−10
Ta=25°C
Ta= −40°C
Ta=125°C
I
C
/I
B
=10/1
I
C
/I
B
=10/1
Ta=25°C
−0.001 −0.01 −0.1 −1 −10
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
−0.01
−0.1
−1
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
−10
I
C
/I
B
=20/1
COLLECTOR CURRENT : I
C
(A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
−0.01
−0.1
−1
BASE EMITTER SATURATION
VOLTAGE : V
BE (sat)
(V)
−10
I
C
/I
B
=10/1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.001 −0.01 −0.1 −1 −10
0 −0.5 −1 −1.5
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.7 Grounded Emitter
Propagation Characteristics
−0.01
−0.1
−1
COLLECTOR CURRENT : I
C
(A)
−10
V
CE
= −2V
Ta= −40°C
Ta=25°C
Ta=125°C
0.001 0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
Fig.8 Transition Frequency
TRANSITION FREQUENCY : fT (MHz)
1000
Ta=25°C
V
CE
= −10V
1
10
100
−0.1 −1 −10 −100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.9
Collector Output Capacitance
1
10
100
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
1000
Ta=25°C
f=1MHz
Product specification
2SA2071Q
Surface Mount PNP Silicon Power Transistor
第２页，共２页
ｗｗｗ．ｃｆｂｄｔ．ｃｎ