For technical questions, contact: Tech@Sinai-power.com.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.
Sinai Power Technologies
SPE7N65G
www.sinai-power.com
14-1101-Rev 02
Document Number: 17047
1
Features
ID=7A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
100% Avalanche Tested
RoHS compliant
N-channel Power MOSFET
Applications
Switching Mode Power Supplies (SMPS)
PWM Motor Controls
DC to DC Converters
LED Lighting
Bridge Circuits
Notes
1. Drain current is limited by maximum junction temperature.
2. Repetitive rating : pulse width limited by junction temperature.
3. L = 15mH, I
AS
= 7A, V
DD
= 50V, R
G
=25Ω, Starting at T
J
= 25
o
C
4. I
SD
≤ 7A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Starting at T
J
=25
o
C
5. Mounting consideration for TO220 Fullpack:
M3 screw plus flat washer is suggested, free of burr between devices and contact area,
the devices are to be mounted to a hole not larger than 3.6mm in contact diameter (chamfer included).
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
o
C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain to Source Voltage V
DSS
650 V
Continuous Drain Current (@T
C
=25
o
C)
I
D
7
A
Continuous Drain Current (@T
C
=100
o
C) 4.5
A
Drain current pulsed
(2)
I
DM
28
A
Gate to Source Voltage V
GS
30 V
Single pulsed Avalanche Energy
(3)
E
AS
367 mJ
Peak diode Recovery dv/dt
(4)
dv/dt 6 V/ns
Total power dissipation (@T
C
=25
o
C)
P
D
166
W
Derating Factor above 25
o
C 1.33
W/
o
C
Operating Junction Temperature & Storage Temperature T
STG
, T
J
-55 to + 150
o
C
Maximum lead temperature for soldering purpose
T
L
260
o
C
Mounting torque
(5)
0.4~0.6 N.m
TO-251