For technical questions, contact: Tech@Sinai-power.com.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.
Sinai Power Technologies
SPD7N65G
www.sinai-power.com
14-1101-Rev 02
Document Number: 17048
1
Features
ID=7A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
100% Avalanche Tested
RoHS compliant
N-channel Power MOSFET
Applications
Switching Mode Power Supplies (SMPS)
PWM Motor Controls
DC to DC Converters
LED Lighting
Bridge Circuits
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
700
R
DS(on)
max. at 25
o
C (Ω)
V
GS
=10V
1.3
Q
g
max. (nC)
42
Q
gs
(nC)
6
Q
gd
(nC)
12
Configuration
single
Notes
1. Drain current is limited by maximum junction temperature.
2. Repetitive rating : pulse width limited by junction temperature.
3. L = 15mH, I
AS
= 7A, V
DD
= 50V, R
G
=25Ω, Starting at T
J
= 25
o
C
4. I
SD
≤ 7A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Starting at T
J
=25
o
C
ORDERING INFORMATION
Device
SPD7N65G
Device Package
TO-252
Marking
7N65G
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
o
C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain to Source Voltage V
DSS
650 V
Continuous Drain Current (@T
C
=25
o
C)
I
D
7
A
Continuous Drain Current (@T
C
=100
o
C) 4.5
A
Drain current pulsed
(2)
I
DM
28
A
Gate to Source Voltage V
GS
30 V
Single pulsed Avalanche Energy
(3)
E
AS
367 mJ
Peak diode Recovery dv/dt
(4)
dv/dt 6 V/ns
Total power dissipation (@T
C
=25
o
C)
P
D
160
W
Derating Factor above 25
o
C 1.28
W/
o
C
Operating Junction Temperature & Storage Temperature T
STG
, T
J
-55 to + 150
o
C
Maximum lead temperature for soldering purpose
T
L
260
o
C
TO-252
For technical questions, contact: Tech@Sinai-power.com.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.
Sinai Power Technologies
SPD7N65G
www.sinai-power.com
14-1101-Rev 02
Document Number: 17048
2
THERMAL CHARACTERISTICS
Symbol
Value
Unit
R
thjc
0.78
o
C/W
R
thja
83
o
C/W
ELECTRICAL CHARACTERISTICS ( T
C
= 25
o
C unless otherwise specified )
Parameter Symbol Test conditions Min. Typ. Max. Unit
Off Characteristics
Drain to source breakdown voltage BV
DSS
V
GS
=0V, I
D
=250uA 650 -- -- V
Breakdown voltage temperature coefficient
ΔBV
DSS
/
ΔTJ
I
D
=250uA, referenced to
25
o
C
-- 0.51 -- V/
o
C
Drain to source leakage current I
DSS
V
DS
=650V, V
GS
=0V -- -- 1 uA
V
DS
=520V, T
C
=125
o
C -- -- 50 uA
Gate to source leakage current, forward
I
GSS
V
GS
=30V, V
DS
=0V -- -- 100 nA
Gate to source leakage current, reverse V
GS
=-30V, V
DS
=0V -- -- -100 nA
On Characteristics
Gate threshold voltage V
GS(TH)
V
DS
=V
GS
, I
D
=250uA 2 -- 4 V
Drain to source on state resistance R
DS(ON)
V
GS
=10V, I
D
=3.5A -- 1.05 1.3 Ω
Forward Transconductance
Gfs
V
DS
= 30 V, I
D
= 3.5 A
-- 5.2 -- S
Dynamic Characteristics
Input capacitance C
iss
V
GS
=0V, V
DS
=25V, f=1MHz
--
1100
--
pF Output capacitance C
oss
--
110
--
Reverse transfer capacitance C
rss
--
15
--
Turn on delay time t
d(on)
V
DS
=380V, I
D
=7A，R
G
=25Ω
--
17
--
ns
Rising time tr --
33
--
Turn off delay time t
d(off)
--
82
--
Fall time t
f
--
41
--
Total gate charge Q
g
V
DS
=520V, V
GS
=10V, I
D
=7A
--
37
--
nC
Gate-source charge Q
gs
--
6
--
Gate-drain charge Q
gd
--
12
--
SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS
Parameter Symbol Test conditions Min. Typ. Max. Unit
Continuous source current I
S
Integral reverse p-n Junction
diode in the MOSFET
--
-- 7
A
Pulsed source current I
SM
--
-- 28
A
Diode forward voltage drop. V
SD
I
S
=7A, V
GS
=0V --
-- 1.2
V
Reverse recovery time T
rr
I
S
=7A, V
GS
=0V,
dI
F
/dt=100A/us
--
450 --
ns
Reverse recovery Charge Qrr --
9.1 --
uC