S9014

TRANSISTOR (NPN)

FEATURES

z

High total power dissipation.(P

C

=0.45W)

z

High hFE and good linearity

z

Complementary to S9015

MAXIMUM RATINGS (T

A

=25℃ unless otherwise noted)

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 50 V

V

CEO

Collector-Emitter Voltage 45 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current -Continuous 0.1 A

P

C

Collector Power Dissipation 0.45 W

T

J

Junction Temperature 150

℃

T

stg

Storage Temperature -55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage

V

(BR)CBO

I

C

=100μA, I

E

=0 50 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

= 1mA, I

B

=0 45 V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=100μA, I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=50V, I

E

=0 0.1 μA

Collector cut-off current

I

CEO

V

CE

=35V, I

B

=0 0.1 μA

Emitter cut-off current

I

EBO

V

EB

= 5V, I

C

=0 0.1 μA

DC current gain

h

FE

V

CE

=5V, I

C

= 1mA 60 1000

Collector-emitter saturation voltage

V

CE

(sat) I

C

=100mA, I

B

= 5mA 0.3 V

Base-emitter saturation voltage

V

BE

(sat) I

C

=100mA, I

B

= 5mA 1 V

Transition frequency

f

T

V

CE

=5V, I

C

= 10mA

f=30MHz

150 MHz

CLASSIFICATION OF h

FE(1)

Rank A B C D

Range

60-150 200-300 250-300 300-400

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