MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(2)
Drain-source on-resistance
(2)
Forward tranconductance
(2)
Dynamic characteristics
(4)
C
iss
V
DS
=-16V,V
GS
=0V,f =1MHz
C
oss
Reverse Transfer Capacitance
C
rss
Switching Characteristics
(4)
t
d(on)
V
DS
=-10V,I
D
=-200mA,
V
GS
=-4.5V,R
G
=10Ω
t
r
t
d(off)
t
f
Source-Drain Diode characteristics
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
P-Channel MOSFET
SM20P07 B3
SSG Semiconductor
www.ssgsemi.com
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R
ev : C