Product S
ummary
Feature
Sur
face Mount Package
P-Channel Switch with Low RDS(on)
Operated at Low Logic Level Gate Drive
ESD
Protected
A
pplication
Load/Power Switching
Interfacing, Logic Switching
Batt
ery Management for Ultra Small Portable Electronics
ABSOLUTE MAXIMUM RATINGS (T
a
=
25
unle
ss otherwise noted)
Pa
rameter Symbol Value Unit
Dr
ain-Source Voltage V
DS
-20 V
G
ate-Source Voltage V
GS
±12 V
Co
ntinuous Drain Current
(1
)
I
D
-1.3
A
P
ulsed Drain Current (t
p
=10µs
) I
DM
-1
.2 A
P
ower Dissipation
(1)
P
D
1
50 mW
T
hermal Resistance from Junction to Ambient
(1)
R 8
33
/
W
Jun
ction Temperature T
J
1
50
S
torage Temperature T
STG
-55~ +
150
L
ead Temperature for Soldering
s
) T
L
2
60
P-Cha
nnel MOSFET
SM20P07
Schematic & PIN Configuration
B
2
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ev : C
Equivalent Circuit
D
S
G
G
a
te Protection
Diode
Top View
Pin Configuration
D
G
S
39K
SOT-523
Top View
V
(BR)DSS
R
I
D
-20V
410mΩ@-4.5V
-1.3
A
570mΩ@-2.5V
780mΩ
@-1.8V
DS(on)
mΩ
MO
SFET ELECTRICAL CHARACTERISTICS(T
a
=
25
u
nless otherwise noted)
Parameter Symbol Test Condition Min Type Max Unit
Static Characteristics
Drain-source breakdown voltage V
(B
R)DSS
V
GS
= 0V, I
D
=-250µA -20 V
Zero gate voltage drain current I
DSS
V
DS
=-20V,V
GS
= 0V -1 µA
Gate-body leakage current I
GSS
V
GS
=±10V, V
DS
= 0V ±20 µA
Gate threshold voltage
(2)
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
Drain-source on-resistance
(2)
R
DS(on)
V
GS
=-4.5V, I
D
=-1A 410 500
V
GS
=-2.5V, I
D
=-0.8A 575 750
V
GS
=-1.8V, I
D
=-0.5A 780
Forward tranconductance
(2)
g
FS
V
DS
=-10V, I
D
=-0.54A 1.2 S
D
ynamic characteristics
(
4)
Input Capacitance C
i
ss
V
DS
=-16V,V
GS
=0V,f =1MHz
113
pFOutput Capacitance C
oss
15
Reverse Transfer Capacitance C
rss
9
Switching Characteristics
(
4)
Turn-on delay time
(3)
t
d(on)
V
DS
=-10V,I
D
=-200mA,
V
GS
=-4.5V,R
G
9
ns
T
urn-on rise time
(3)
t
r
5.7
Turn-off delay time
(3
)
t
d(off)
32.6
Turn-off fall time
(3)
t
f
20.3
Sourc
e-Drain Diode characteristics
Diode forward voltage V
DS
I
S
=-0.5A, V
GS
= 0V -1.2 V
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
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P-Cha
nnel MOSFET
SM20P07
B2
-0.4 -0.7 -1 V
1100