Product Summary
V
(BR)DSS
R
DS(on)MAX
I
D
-20V
520mΩ@-4.5V
-0.66A
780mΩ@-2.5V
950mΩ(TYP)@-1.8V
Feature
Surface Mount Package
P-Channel Switch with Low RDS(on)
Operated at Low Logic Level Gate Drive
ESD Protected
Application
Load/Power Switching
Interfacing, Logic Switching
Battery Management for Ultra Small Portable Electronics
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
±12
V
Continuous Drain Current
(1)
I
D
-0.66
A
Pulsed Drain Current (t
p
=10µs)
I
DM
-1.2
A
Power Dissipation
(1)
P
D
100
mW
Thermal Resistance from Junction to Ambient
(1)
R
θJA
1250
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
Lead Temperature for Soldering Purposes(1/8” from case for 10s)
T
L
260
P-Channel MOSFET
Schematic & PIN Configuration
39
DFN1006-3L
Equivalent Circuit
Top View
Internal Schematic
Bottom View
D
S
G
D
S
G
Ga
te Protection
Diode
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SM20P07
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
=-250µA
-20
V
Zero gate voltage drain current
I
DSS
V
DS
=-20V,V
GS
= 0V
-1
µA
Gate-body leakage current
I
GSS
V
GS
=±10V, V
DS
= 0V
±20
µA
Gate threshold voltage
(2)
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
-0.35
-0.61
-1.1
V
Drain-source on-resistance
(2)
R
DS(on)
V
GS
=-4.5V, I
D
=-1A
450
520
mΩ
V
GS
=-2.5V, I
D
=-0.8A
650
780
V
GS
=-1.8V, I
D
=-0.5A
950
Forward tranconductance
(2)
g
FS
V
DS
=-10V, I
D
=-0.54A
1.2
S
Dynamic characteristics
(4)
Input Capacitance
C
iss
V
DS
=-16V,V
GS
=0V,f =1MHz
113
pF
Output Capacitance
C
oss
15
Reverse Transfer Capacitance
C
rss
9
Switching Characteristics
(4)
Turn-on delay time
(3)
t
d(on)
V
DS
=-10V,I
D
=-200mA,
V
GS
=-4.5V,R
G
=10Ω
9
ns
Turn-on rise time
(3)
t
r
5.7
Turn-off delay time
(3)
t
d(off)
32.6
Turn-off fall time
(3)
t
f
20.3
Source-Drain Diode characteristics
Diode forward voltage
V
DS
I
S
=-0.5A, V
GS
= 0V
-1.2
V
Notes:
1.Surface mounted on FR4 board using the minimum recommended pad size.
2.Pulse Test : Pulse Width=300μs, Duty Cycle=2%.
3.Switching characteristics are independent of operating junction temperatures.
4.Guaranteed by design, not subject to producting.
P-Channel MOSFET
SSG Semiconductor
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SM20P07