P
roduct Summary
V
(BR)DSS
R
DS(on)MAX
I
D
20V
380mΩ@4.5V
0.75A
450mΩ@2.5V
800mΩ@1.8V
Feature
Surface Mount Package
N-Channel Switch with Low R
DS(on)
Operated at Low Logic Level Gate Drive
Application
Load/Power Switching
Interfacing Switching
Battery Management for Ultra Small Portable Electronics
Logic Level Shift
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
±12
V
Continuous Drain Current
I
D
0.75
A
Pulsed Drain Current
(1)
I
DM
3
A
Power Dissipation
(2)
P
D
200
mW
Thermal Resistance from Junction to Ambient
(1)
R
θJA
625
℃/W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
Schematic & PIN Configuration
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R
ev : C
N-Channel MOSFET
SM20N07 B1
Equivalent Circuit
SOT-323
Top View
Top View
Pin Configuration
D
G
S
34K
D
S
G
Gat
e Protection
Diode
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Symbol
Test Condition
Min
Type
Max
Unit
Static Characteristics
V
(BR)DSS
V
GS
= 0V, I
D
=250µA
20
V
I
DSS
V
DS
=20V,V
GS
= 0V
1
µA
I
GSS
V
GS
=±10V, V
DS
= 0V
±20
µA
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
0.35
0.75
1.1
V
R
DS(on)
V
GS
=4.5V, I
D
=650mA
190
380
mΩ
V
GS
=2.5V, I
D
=550mA
260
450
V
GS
=1.8V, I
D
=450mA
350
800
g
FS
V
DS
=10V, I
D
=800mA
1.6
S
Dynamic characteristics
(4)
C
iss
V
DS
=16V,V
GS
=0V,f=1MHz
79
120
pF
C
oss
13
20
C
rss
9
15
Switching Characteristics
(4)
t
d(on)
V
DS
=10V,I
D
=500mA,
V
GS
=4.5V,R
G
=10Ω
6.7
ns
t
r
4.8
t
d(off)
17.3
t
f
7.4
Source-Drain Diode characteristics
V
DS
I
S
=0.15A, V
GS
= 0V
1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25℃.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.
4. These parameters have no way to verify.
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R
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N-Channel MOSFET
SM20N07 B1